基于光刻工艺的高分辨全彩QLED器件制备与性能优化  

Fabrication and Performance Optimization of Full-color QLED Devices Based on Photolithography

作　　者：高宏锦 井继鹏 李福山[1] 胡海龙[1] GAO Hongjin;JING Jipeng;LI Fushan;HU Hailong(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,CHN)

机构地区：[1]福州大学物理与信息工程学院,福州350108

出　　处：《光电子技术》2022年第3期176-180,共5页Optoelectronic Technology

基　　金：国家自然科学基金(62075043)。

摘　　要：采用基于光酸反应的光刻工艺,获得均匀的红、绿、蓝三基色量子点薄膜作为发光层,成功制备出高分辨全彩QLED器件(子像素宽度5μm)。通过对光刻量子点表面进行配体钝化,并引入电荷阻挡层以降低非发光区的漏电流,明显提升了全彩QLED的器件性能,所制备器件的最大亮度为23831 cd/m^(2),外量子效率为3.78%。A photolithography process based on photo acid reaction was used to obtain uniform red,green and blue quantum dot films as light-emitting layers,and a high-resolution full-color QLED device(sub-pixel width of 5μm)was successfully prepared.The device performance of full-color QLEDs was significantly improved by ligand passivation of photolithographic quantum dot surfaces,as well as by introduction of a charge blocking layer to reduce the leakage current in the non-emitting region.The resultant QLEDs showed the maximum brightness of 23831 cd/m2and external quantum efficiency of 3.87%.

关 键 词：光刻 像素化 光酸反应 量子点发光器件 

分 类 号：TN27[电子电信—物理电子学]