主辅栅分立的U沟道XNOR场效应晶体管  

U-Channel XNOR Field Effect Transistor with Discrete Main and Auxiliary Gates

作　　者：李龙 靳晓诗[1] 韩贤雨 LI Long;JIN Xiaoshi;HAN xianyu(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870

出　　处：《微处理机》2022年第6期1-4,共4页Microprocessors

摘　　要：针对传统场效应晶体管尺寸缩小给器件带来严重的短沟道效应和源漏隧穿效应等问题,提出一种基于肖特基势垒的采用主、辅栅分立式设计的U沟道XNOR场效应晶体管。设计通过增加金属铝与体硅的接触面积来实现肖特基隧穿效应,通过双栅结构来降低亚阈值摆幅,减小漏电流。通过U沟道设计来增加有效沟道长度,同时提高集成度。并通过控制两个栅极的电压极性来实现器件XNOR的逻辑功能。在实验部分使用Silvaco TCAD仿真软件完成器件转移特性与XNOR逻辑功能的验证。In view of the serious short channel effect and source-drain tunneling effect caused by the shrinking size of traditional field-effect transistors,a U-channel XNOR field-effect transistor based on Schottky barrier with the main and auxiliary gates in discrete design is proposed.The Schottky tunneling effect is realized by increasing the contact area between metal aluminum and bulk silicon,and the subthreshold swing and leakage current are reduced by double-gate structure.U-channel design is adopted to increase the effective channel length and improve the integration.The XNOR logic function of the device is realized by controlling the voltage polarity of the two gates.In the experimental part,Silvaco TCAD simulation software is used to verify the device transfer characteristics and XNOR logic functions.

关 键 词：主辅栅 U形沟道 短沟道效应 肖特基势垒 

分 类 号：TN386.3[电子电信—物理电子学]