CeO_(2)缓冲层层数对YBa2Cu3O7-σ超导薄膜载流能力的影响  

Effect of the CeO_(2)Buffer Layers Number on Current-Carrying Capacity of YBa_(2)Cu_(3)O_(7-σ)Superconducting Thin Films

作　　者：张博 陈志杰[1,2] 潘天宇 赵培 ZHANG Bo;CHEN Zhijie;PAN Tianyu;ZHAO Pei(Materials Science and Engineering,Wuhan Institute of Technology,Wuhan 430205,China;Hubei Key Laboratory of Plasma Chemistry and Advanced Materials,Wuhan Institute of Technology,Wuhan 430205,China;Key Laboratory of Green Chemical Process of Ministry of Education,Wuhan Institute of Technology,Wuhan 430205,China)

机构地区：[1]武汉工程大学材料科学与工程学院,武汉430205 [2]等离子体化学与新材料湖北省重点实验室武汉工程大学,武汉430205 [3]绿色化工过程教育部重点实验室武汉工程大学,武汉430205

出　　处：《真空科学与技术学报》2022年第10期774-780,共7页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(51972241);武汉工程大学研究生教育创新基金项目(CX2020159)。

摘　　要：为了提高超导薄膜的载流能力,本文通过MOCVD法,在1-5层(100)取向的氧化铈缓冲层薄膜上制备YBa_(2)Cu_(3)O_(7-σ)薄膜。研究了缓冲层层数对YBa_(2)Cu_(3)O_(7-σ)薄膜物相组成、结晶度、面内取向、微观形貌和超导性能的影响。结果表明,当缓冲层数为1-2时,薄膜呈现高度(001)取向生长;当缓冲层数为4-5时,薄膜呈现高度(110)取向生长。其中氧化铈薄膜层数为1时,YBCO薄膜结晶度和面内取向最好,其ω和Ф扫描曲线的FWHM值分别为2.63°和5.21°;随着缓冲层数的增加,YBCO薄膜结晶度和面内取向均呈现变差的趋势。氧化铈缓冲层与YBCO薄膜之间的外延生长关系为YBCO[001]//Ce O_(2)[100]和YBCO[010]//Ce O_(2)[011]。缓冲层数为1的YBCO薄膜表面主要由大面积c轴取向的晶粒组成,其厚度为485 nm,沉积速率为4.85μm/h,其液氮温度(77 K)下的临界电流为20.8 A,相比于缓冲层数为0的超导薄膜临界电流有所提升。In order to improve the current-carrying capacity of superconducting thin films,YBa_(2)Cu_(3)O_(7-σ)thin films were prepared on 1-5 layer(100)oriented cerium oxide buffer films by MOCVD.Effects of buffer layers on the phase composition,crystallinity,in-plane orientation,microstructure,and superconductivity of YBa_(2)Cu_(3)O_(7-σ)films were investigated.Results show that YBCO films grow in a high(001)orientation with buffer layers number being 1-2 and grow in a high(110)orientation with buffer layers number being 4-5.The crystallinity and in-plane orientation of YBCO film are the best with buffer layers number being 1,with FWHM values ofωandФscanning curves being 2.63°and 5.21°,respectively.The crystallinity and in-plane orientation of YBCO films become worse with the increase of buffer layers.Epitaxial growth relationship between cerium oxide buffer layer and YBCO film is YBCO[001]//Ce O_(2)[100]and YBCO[010]//Ce O_(2)[011].The surface of YBCO film with 1 buffer layer is mainly composed of a large area of c-axis grain,the thickness is 485 nm,the deposition rate is 4.85μm/h,and the critical current is 20.8 A at liquid nitrogen temperature(77 K),which is higher than that of the superconducting film without buffer layer.

关 键 词：MOCVD 超导薄膜 临界电流 缓冲层 

分 类 号：TB39[一般工业技术—材料科学与工程]