高温外延炉气体压力控制系统的实现  

Implementation of Gas Pressure Control System for High Temperature Epitaxial Furnace

作　　者：毛朝斌 高桑田 盛飞龙 仇礼钦 王鑫 MAO Zhaobin;GAO Sangtian;SHENG Feilong;QIU Liqin;WANG xin(Jihua Laboratory,Foshan 528251,China)

机构地区：[1]季华实验室,广东佛山528251

出　　处：《电子工业专用设备》2022年第5期1-4,31,共5页Equipment for Electronic Products Manufacturing

基　　金：季华实验室自主重大项目(X210241TC210)。

摘　　要：针对碳化硅外延工艺过程中压力控制范围大、控制精度高的要求,以及受到温度、气流变化大的影响,介绍了一种用于碳化硅高温外延工艺的高温外延炉腔内压力控制系统。通过分析碳化硅外延炉压力控制系统,提出了模糊自适应PID控制算法。在国产碳化硅外延设备上进行验证,实验结果表明压力控制系统具有较快的响应速度和较低的超调量,效果良好,能满足碳化硅高速外延需求。In order to meet the requirements of large pressure control range and high control accuracy in silicon carbide epitaxial process,as well as the influence of large changes in temperature and gas flow,a pressure control system of high temperature epitaxial furnace for silicon carbide high temperature epitaxial process is introduced.By analyzing the pressure control system of silicon carbide epitaxial furnace,the fuzzy adaptive PID control algorithm is put forward.The experimental results show that the pressure control system has a fast response speed and a low overshoot,which can meet the demand of silicon carbide high-speed epitaxy.

关 键 词：碳化硅 高速外延 压力控制 比例积分微分 

分 类 号：TN305[电子电信—物理电子学]