InGaP/GaAs/InGaAs倒装结构三结太阳电池的辐照损伤仿真分析  被引量:2

Simulation analysis of irradiation damage of inverted InGaP/GaAs/InGaAs triple-junction solar cells

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作  者:王彪 方美华[1] 陆宏波[2] 周宏涛 陈建飞 梁筝 魏志勇[1] WANG Biao;FANG Meihua;LU Hongbo;ZHOU Hongtao;CHEN Jianfei;LIANG Zheng;WEI Zhiyong(College of Astronautics,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China;Shanghai Institute of Space Power,Shanghai 200245,China)

机构地区:[1]南京航空航天大学航天学院,南京210016 [2]上海空间电源研究所,上海200245

出  处:《航天器环境工程》2022年第6期562-568,共7页Spacecraft Environment Engineering

基  金:国家自然科学基金青年基金项目“晶格失配高效多结III-V族太阳能电池在空间捕获辐射条件下的性能衰减研究”(编号:11405085)。

摘  要:为了保证倒装结构三结电池在空间辐射环境中使用的可靠性,揭示倒装工艺引入位错缺陷对电池辐射衰减的影响,文章基于泊松方程和载流子传输方程建立了倒装结构InGaP/GaAs/InGaAs三结太阳电池的物理模型,在地面等效实验验证的基础上,研究辐射以及电池内部位错缺陷对电池输出的影响。首先通过模型研究了微观载流子复合与电池电学性能之间的关联,发现当1 MeV电子入射注量达到10^(14) cm^(-2)时,该电池中少数载流子复合由辐射复合起主要作用转变为由非辐射复合起主要作用。此外,文中还给出了InGaAs底电池的非辐射少数载流子寿命以及电池电学参数与穿透位错密度(TDD)的函数关系,发现随着TDD的增加,辐照对少子寿命和电池性能的影响均减弱。In this paper,a physical model of inverted InGaP/GaAs/InGaAs triple-junction solar cell was established based on Poisson equation and carrier transport equation to ensure the reliability of inverted triplejunction cell under space radiation,and to reveal the effect of dislocation defects introduced by inverted process on the radiation attenuation of the cells.On the basis of ground equivalent experimental verification,the effect of radiation and internal dislocation defects on cell output were studied.Firstly,the relationship between the microscopic carrier recombination and the electrical performance of the cell was studied using the model.It is found that,when the fluence of 1 MeV electron reaches 10^(14) cm^(-2),the non-radiative instead of radiative recombination of minority carriers dominates the degradation of the solar cells.In addition,the function relationship of the non-radiative minority carrier lifetime and electrical parameters with the threading dislocation density(TDD)of InGaAs bottom cells was simulated.It is found that,with the increase of TDD,the effect of radiation on the minority carrier lifetime decreases.

关 键 词:倒装结构三结太阳电池 性能衰减 位错缺陷 少数载流子寿命 

分 类 号:O483[理学—固体物理] V416.5[理学—物理]

 

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