Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers  

作　　者：Kai FANG Nian LI Peng LI Zhenghua QIAN V.KOLESOV I.KUZNETSOVA 

机构地区：[1]State Key Laboratory of Mechanics and Control of Mechanical Structures,College of Aerospace Engineering,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China [2]Nanjing University of Aeronautics and Astronautics Shenzhen Research Institute,Shenzhen 518057,Guangdong Province,China [3]Kotel’nikov Institute of Radio Engineering and Electronics of Russian Academy of Sciences,Moscow 125009,Russia

出　　处：《Applied Mathematics and Mechanics(English Edition)》2022年第9期1367-1380,共14页应用数学和力学（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.12061131013,11972276,1211101401,12172171,and 12102183);the State Key Laboratory of Mechanics and Control of Mechanical Structures of Nanjing University of Aeronautics and Astronautics(No.MCMS-E-0520K02);the Fundamental Research Funds for the Central Universities of China(Nos.NE2020002 and NS2019007);the National Natural Science Foundation of China for Creative Research Groups(No.51921003);the Postgraduate Research&Practice Innovation Program of Jiangsu Province of China(No.KYCX210179);the National Natural Science Foundation of Jiangsu Province of China(No.BK20211176);the Local Science and Technology Development Fund Projects Guided by the Central Government of China(No.2021Szvup061);the Jiangsu High-Level Innovative and Entrepreneurial Talents Introduction Plan(Shuangchuang Doctor Program,No.JSSCBS20210166)。

摘　　要：In this paper,we propose a specific two-layer model consisting of a functionally graded(FG)layer and a piezoelectric semiconductor(PS)layer.Based on the macroscopic theory of PS materials,the effects brought about by the attached FG layer on the piezotronic behaviors of homogeneous n-type PS fibers and PN junctions are investigated.The semi-analytical solutions of the electromechanical fields are obtained by expanding the displacement and carrier concentration variation into power series.Results show that the antisymmetry of the potential and electron concentration distributions in homogeneous n-type PS fibers is destroyed due to the material inhomogeneity of the attached FG layer.In addition,by creating jump discontinuities in the material properties of the FG layer,potential barriers/wells can be produced in the middle of the fiber.Similarly,the potential barrier configuration near the interface of a homogeneous PS PN junction can also be manipulated in this way,which offers a new choice for the design of PN junction based devices.

关 键 词：piezoelectric semiconductor(PS) functionally graded(FG)material composite structure PN junction 

分 类 号：O472.91[理学—半导体物理]