Light soaking-induced performance enhancement in a-Si:H/c-Si heterojunction solar cells  

非晶硅/晶体硅异质结太阳电池中的光致增强现象

作　　者：Qiyuan He Zechen Hu Xuegong Yu Pengjie Hang Lihui Song Dehang Lin Lifei Yang Deren Yang 何其圆;胡泽晨;余学功;杭鹏杰;宋立辉;林德杭;杨黎飞;杨德仁(State Key Lab of Silicon Materials and School of Materials Science&Engineering,Zhejiang University,Hangzhou 310027,China;Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University,Hangzhou 311200,China;SuZhou GH New Energy Tech.Co.,Ltd.,Suzhou 215128,China)

机构地区：[1]State Key Lab of Silicon Materials and School of Materials Science&Engineering,Zhejiang University,Hangzhou 310027,China [2]Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University,Hangzhou 311200,China [3]SuZhou GH New Energy Tech.Co.,Ltd.,Suzhou 215128,China

出　　处：《Science China Materials》2022年第12期3513-3517,共5页中国科学（材料科学（英文版）

基　　金：the National Natural Science Foundation of China(61974129,62025403,and 61721005);the Natural Science Foundation of Zhejiang Province(LD22E020001);Lingyan Research and Development Project of Zhejiang Province(022C01215).

摘　　要：demonstrated to hydrogenate dangling bonds on the surface of crystalline silicon(c-Si),which reduces the interface defect density,thus enabling an outstanding passivation effect[1–3].However,like many other industrial c-Si solar cells that suffer from light-induced degradation and light and elevated temperature induced degradation(LeTID)[4,5],the decay of electrical properties has also been found in thin-film a-Si:H solar cells[6–8],as well as samples of c-Si coated with intrinsic a-Si:H films after light soaking[9].A significant observation reported by Plagwitz et al.[10]suggested that illumination induced an increase in surface recombination velocities for both a-Si:H coated p-type and n-type c-Si substrates.The degradation of performance is generally attributed to the generation of deeplevel defects acting as recombination centers,most likely as single dangling bonds[11,12],which is considered to be related to the Staebler-Wronski effect(SWE)[13].硅异质结(SHJ)太阳电池由于具有本征非晶硅/掺杂非晶硅的双层膜结构,表现出了优异的钝化特性.在本文中,我们在加热光照条件下研究了SHJ太阳电池的少子寿命变化情况,发现其会有明显提升.通过分析饱和电流密度(J_(0))的数值变化,将此现象归因于SHJ太阳电池的表面钝化质量提高.基于以上实验结果,利用指数函数拟合模型可以提取出不同温度下光致增强的速率,并利用阿伦尼乌斯拟合,得到光致增强的激活能为0.47 eV,这说明钝化质量提高与非晶硅层中的氢扩散有关.此外,稳定性测试结果显示SHJ太阳电池的增强效果可以维持至少1000小时.本研究结果对于理解SHJ太阳电池的光致增强机理及其实际应用十分有意义,有助于进一步推进全球光伏产业的发展.

关 键 词：非晶硅 太阳电池 饱和电流 表面钝化 稳定性测试 阿伦尼乌斯 光伏产业 少子寿命 

分 类 号：TQ127.2[化学工程—无机化工] TM914.4[电气工程—电力电子与电力传动]