低维铟基阱-点复合量子结构及光学性能和应用前景  

Low-Dimensional Indium-Based Well--Dot Composite Quantum Structures and Their Optical Properties and Application Prospects

作　　者：吴坚[1] 王玉红 邰含旭 郑明[1] 段若楠 Wu Jian;Wang Yuhong;Tai Hanxu;Zheng Ming;Duan Ruonan(School of Physics,Beihang University,Beijing 100191,China)

机构地区：[1]北京航空航天大学物理学院,北京100191

出　　处：《中国激光》2022年第19期70-87,共18页Chinese Journal of Lasers

基　　金：国家自然科学基金(61874117)。

摘　　要：现代光电信息产业的快速发展对半导体光电器件提出了越来越高的要求,从而推动了半导体低维复合量子结构材料的研究和发展。其中,富铟团簇自组装复合量子结构材料因展现出灵活的结构调控性和优异的光学性能,获得了广泛的关注,成为实现新一代高性能半导体发光器件的重要结构材料。介绍了当前三种典型的低维铟基阱-点复合量子结构材料及其光学性能,重点分析了基于InGaAs材料的富铟团簇自组装阱-点复合量子结构材料的特殊生长机制以及新发现的优异光学性能,详细阐述了这种新的结构在实现新一代光谱功率均匀一致的超宽调谐半导体激光器、偏振双波长激光器以及偏振独立半导体光放大器等方面的应用成果和发展前景。Significance The rapid development of the modern optoelectronic information industry has increased the requirements for semiconductors in optoelectronic devices.Low-dimensional semiconductor materials with smaller sizes,adjustable performance,and greater integration flexibility are the basis for developing a new generation of nano-optoelectronic devices and systems.Quantum dots occupy an important position in low-dimensional quantum structure materials owing to their unique structural and physical properties,which make them a promising,low-dimensional structural material for the next generation of optoelectronic devices.However,the performance of quantum dot-based devices has not matched the theoretical expectations of the material because quantum dots are difficult to fabricate at a high standard.As quantum dots are very small,the number of hot carriers is increased,which significantly affects the modulation speed and results in a decrease of the carrier collection efficiency of the device.In a quantum well,another well-known low-dimensional structure,the carriers are constrained only in the direction of the well width,and the density of the state presents a ladder-like distribution,which is significantly larger than that of quantum dots.Thus,a quantum well is more suitable for the collection and storage of carriers than quantum dots.This makes it possible to study and develop a composite quantum structure that combines quantum dots and wells.As a new type of semiconductor low-dimensional quantum structure,the indium-based well--dot composite quantum structure inherits the advantages of both traditional quantum dots and wells while overcoming their inherent constraints due to its composite nature as well as the available control over the structure.Furthermore,well--dot composite quantum structures can be used to implement energy-band engineering more effectively,improve the physical and optical properties of traditional low-dimensional semiconductor materials,and expand optoelectronic device applications.Progres

关 键 词：激光器 半导体激光器 InGaAs材料 低维复合量子结构 富铟团簇效应 光学增益 

分 类 号：O472.3[理学—半导体物理]