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作 者:冯仕亮 陈荣鹏 王魏巍 于平平 姜岩峰 Feng Shiliang;Chen Rongpeng;Wang Weiwei;Yu Pingping;Jiang Yanfeng(Department of Electronic Engineering,School of Internet of Things Engineering,Jiangnan University,Wuxi 214122,Jiangsu,China)
机构地区:[1]江南大学物联网工程学院电子工程系,江苏无锡214122
出 处:《光学学报》2022年第20期146-151,共6页Acta Optica Sinica
基 金:国家自然科学基金(51802124)。
摘 要:有机半导体材料具有对环境友好的特点和优良的光电特性,广泛应用于光电探测器。通过旋涂法结合p型有机半导体材料Spiro-MeOTAD和Se微米管(Se-MT)制备一种新型Se/Spiro-MeOTAD异质结结构。Se/Spiro-MeOTAD光电探测器在350~800 nm波长范围内具有较佳的光响应度和开关比,不需要外加偏置电压,具有自驱动的良好光电特性。相比于单根Se-MT器件(0.1 V),该探测器在0 V偏压410 nm光照下的响应度提高了10倍,达到36.5 mA·W^(-1),开关比为156(增强800%),上升和下降时间分别缩短至22 ms和35 ms。这一研究结果表明有机半导体材料可以有效改善无机半导体的光电特性,利用无机/有机异质结可制备高性能的光电器件。Organic semiconductor materials have been widely used in photodetectors due to their eco-friendly property and excellent photoelectric property.In this paper,a novel Se/Spiro-MeOTAD heterojunction is fabricated by the spin-coating method combining p-type organic semiconductor materials Spiro-MeOTAD and Se microtube(Se-MT).The Se/SpiroMeOTAD photodetector has excellent responsivity and switching ratio in the wavelength range from 350 nm to 800 nm and consumes no extra bias voltage,which shows favorable self-powered photoelectric properties.Compared with a single Se-MT device(0.1 V),the Se/Spiro-MeOTAD photodetector improves the responsivity by 10 times to 36.5 mA·W^(-1)when the wavelength is 410 nm and the bias voltage is 0 V.The switching ratio is 156(an enhancement of 800%),and the rise time and decay time reduce to 22 ms and 35 ms,respectively.The results show that organic semiconductor materials can effectively improve the photoelectric properties of inorganic semiconductors,and inorganic/organic heterojunction can be used to fabricate high-performance photoelectric devices.
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