具有新型电极结构的功率发光二极管  

Power Light-Emitting Diode with Novel Electrode Structure

作　　者：方奥琪 郭伟玲[1] 许昊 邓杰[1] 陈佳昕 孙捷[1] Fang Aoqi;Guo Weiling;Xu Hao;Deng Jie;Chen Jiaxin;Sun Jie(Key Laboratory of Opto-Electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学光电子技术教育部重点实验室,北京100124

出　　处：《光学学报》2022年第19期176-180,共5页Acta Optica Sinica

基　　金：国家科技重大专项(2017YFB0403102)。

摘　　要：为进一步提高GaN基发光二极管(LED)的光效,以改进电极结构为研究点,设计并制备了具有叉指型电极形状,并在P/N电极下刻蚀出电极孔的新型电极结构。该结构使金属电极在P/N电极孔处分别与ITO层和N-GaN层直接接触,进而提高了器件的电流扩展能力和发光效率。为了得到更优的电流阻挡层(CBL)结构、电极孔尺寸和电极孔间距,设计了7种不同的器件,并对其进行了光电性能测试。测试结果表明:在150 mA工作电流下,不连续CBL结构不能够有效改善LED的发光性能;P电极孔尺寸对器件的性能影响不大,当P电极孔间距由20μm增大为30μm时,外量子效率(EQE)和光电转换效率(WPE)分别提升了约5.0%和3.8%;当N电极孔尺寸由17μm×5μm减小为10μm×5μm时,EQE和WPE分别提升了约6.5%和3.0%;当N电极孔间距由45μm减小为40μm时,并未有效改善器件的发光性能。In order to further improve the luminous efficiency of GaN-based light-emitting diodes(LEDs),a novel electrode structure with an interdigitated electrode and electrode holes etched under the P/N electrode is designed and fabricated,with the improvement of the electrode structure as the research point.In this structure,the metal electrodes are in direct contact with the ITO and the N-GaN layers at the P/N electrode holes respectively,so as to improve the current spreading capacity and luminous efficiency of the device.In order to obtain better current blocking layer(CBL)structure,electrode hole size and electrode hole spacing,seven different devices are designed,and their photoelectric properties are tested.The test results show that under the working current of 150 mA,the discontinuous CBL structure cannot effectively improve the luminescence performance of LEDs.The size of the P electrode hole has little effect on the properties of the device.When the spacing of the P electrode hole increases from 20μm to 30μm,the external quantum efficiency(EQE)and wall-plug efficiency(WPE)increase by about 5.0%and 3.8%,respectively.When the size of the N electrode hole reduces from 17μm×5μm to 10μm×5μm,the EQE and WPE increase by about 6.5%and 3.0%,respectively.When the spacing of the N electrode hole reduces from 45μm to 40μm,the luminescence performance of the device is not effectively improved.

关 键 词：光学器件 GAN基发光二极管 光电特性 热可靠性 

分 类 号：TN29[电子电信—物理电子学]