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作 者:黄豪杰 钱吉裕[1] 魏涛[1] HUANG Hao-jie;QIAN Ji-yu;WEI Tao(Nanjing Research Institute of Electronics Technology,Nanjing 210039,China)
出 处:《中国电子科学研究院学报》2022年第9期842-847,共6页Journal of China Academy of Electronics and Information Technology
基 金:国家自然科学基金(52206214);江苏省青年科技基金(SBK2022046033)。
摘 要:通过对高热流度散热条件下内嵌平行微通道和岐管式微通道结构的两层多芯片硅基微通道散热器进行仿真分析,对比两种结构的流动和传热特性差异,进而对该晶圆级键合的硅基板进行热应力耦合仿真,分析两种不同结构下各层硅基板的应力分布。系统设计中单芯片热流密度为1000 W/cm^(2),芯片热耗共640 W,流道采用串并联对称设计。平行微通道和岐管式微通道的特征宽度为0.2 mm,高度/深度为0.35 mm。结果表明,相比平行微通道,岐管式微通道可获得更低的芯片温度,更陡峭的流阻特性曲线,但均温性相当;不同结构和温度分布导致的应力集中区域和翘曲变形方向不一致。Simulation comparison of flow characteristic and thermal characteristic was carried out between the parallel micro-channel structure and manifold micro-channel structure embedded in a two-layer silicon-based heat exchanger under high heat flux condition.The coupling thermal stress analysis was then simulated under wafer-level silicon packaging in order to obtain the stress distribution.The chip heat flux in simulation is 1000 W/m^(2) and total heat power of all chips is 640 W.The flow passage is designed symmetrically with serial and parallel structures.The characteristic width is 0.2 mm while the characteristic height/depth is 0.35 mm for parallel micro-channel and manifold micro-channel.The result show manifold micro-channel has lower chip temperature and more sensitive flow resistance characteristic curve while equally temperature uniformity.Different structure and temperature distribution lead to different thermal stress concentration and deformation direction.
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