GaN功率器件调制电路在T/R组件中的设计与应用  

Design and Application of GaN Power Device Modulation Circuit in T/R Module

作　　者：夏达[1] 蔡晓波[1] 孙引进 XIA Da;CAI Xiao-bo;SUN Yin-jin(The14th Research Institute of CETC,Nanjing 210039,China)

机构地区：[1]中国电子科技集团公司第十四研究所,南京210039

出　　处：《微波学报》2022年第6期67-70,共4页Journal of Microwaves

摘　　要：介绍了一种GaN功率器件调制电路的设计方法。该调制电路广泛用于T/R组件发射链路的大功率GaN功放,具有高电压工作、大电流供给以及尖峰电压抑制等功能。文中重点论述了调制电路的原理,指出尖峰电压抑制功能是实现该调制电路的难点。经仿真分析实现了延时在500 ns以内、负压检测电平在-4.2~-3.8 V的关键指标。最后选用聚四氟乙烯印制板设计出GaN功率器件调制电路实物,在T/R组件中进行了应用验证,测试结果与仿真结论相符。该调制电路体积小、可靠性高,可用于高功率GaN功放的设计,具有广阔的工程应用前景。This article introduces a design method of GaN power device modulation circuit,which is widely used in high power GaN power amplifier of transmitting chain in the design of T/R module.It has high voltage operation,large current supply,peak voltage suppression and other functions.The article focuses on the principle of the modulation circuit,of which the peak voltage suppression function is the difficulty of its realization.Through simulation analysis,the key indicators of time delay within 500 ns and negative voltage detection level between-4.2 V and-3.8 V are realized.Finally,a PTFE printed board is selected to design the GaN power device modulation circuit and the actual test is consistent with the simulation conclusion from the application of T/R module.The modulation circuit is small,and it has high reliability.It can be applied to the design of high power GaN power amplifiers,which would have broad application prospects.

关 键 词：氮化镓 调制电路 尖峰电压 

分 类 号：TN958.92[电子电信—信号与信息处理]