EDTA/THPED二元络合体系化学镀铜的沉积动力学分析  

Deposition kinetics analysis of electroless copper using the EDTA/THPED dual-ligand system

作　　者：卢建红 余柳丝 范金龙 孟俊臣 陈立峰 吴光伟 LU Jianhong;YU Liusi;FAN Jinlong;MENG Junchen;CHEN Lifen;WU Guangwei(School of Material Science and Engineering,Zigong 643000,Sichuan,China;Material Corrosion and Protection Key Laboratory of SichuanProvince,Zigong 643000,Sichuan,China;Sichuan Oil Natural Gas Technology Co.,Ltd.,Zigong 643000,Sichuan,China;China Petro Southwest Oil&Gasfield Company,Chengdu 610051,China)

机构地区：[1]四川轻化工大学,材料科学与工程学院,四川自贡643000 [2]四川轻化工大学材料腐蚀与防护四川省重点实验室,四川自贡643000 [3]四川川油天然气科技股份有限公司,四川自贡643000 [4]中石油西南油气田公司物资分公司,成都610051

出　　处：《有色金属科学与工程》2022年第6期42-49,共8页Nonferrous Metals Science and Engineering

基　　金：材料腐蚀与防护四川省重点实验室开放基金(2021CL02);四川轻化工大学人才引进基金(2021RC01)。

摘　　要：为增强对化学镀铜反应过程的调控,建立了乙二胺四乙酸(EDTA)/四羟丙基乙二胺(THPED)二元络合化学镀铜体系,基于Arrhenius和经验动力学公式对该二元络合体系的沉积动力学及控制步骤进行分析。研究表明,该二元络合体系的反应表观活化能(Ea)为15.2 kJ/mol,远低于活化能(Ea)为60.9 kJ/mol的EDTA单络合体系,对应各主要组分的反应级数比EDTA单络合剂体系高,其中C(OH-)对二元络合体系沉积过程的作用与对单络合体系的作用完全不同,即促进了二元络合体系的沉积反应,又对单络合体系起抑制作用。二元络合体系各组分对动力学影响程度依次为:C(Cu2+)>C(OH-)>C(HCHO)>C(L)。混合电位测试结果显示阴极还原反应受铜络离子扩散过程的控制。获得了二元络合剂体系化学沉积过程的动力学方程模型。To enhance the regulation of the electroless copper plating reaction,an EDTA/THPED dual-ligand system was established,and the deposition kinetics and control steps of the system were analyzed based on Arrhenius and empirical kinetics formulas.The deposition kinetics and rate-determining step of the EDTA/THPED dual-ligand electroless copper system were analyzed based on Arrhenius and empirical dynamics formulas.The results show that the average activation energy Ea of the electrochemical reaction of the dual-ligand system was 15.2 kJ/mol,which is much lower than the activation energy Ea of 60.9 kJ/mol of the EDTA single system.The OH-concentration has a different effect on the deposition process of the binary system relative to the single system;that is,C(OH-)can promote the reaction velocity of the binary ligand system while retarding the single ligand system.The impact of the main components on the kinetics of electroless deposition is listed as follows:C(Cu2+)>C(OH-)>C(HCHO)>C(L).The mixed potential test shows that the deposition reaction is controlled by the diffusion process of copper ions.The deposition kinetic model of electroless copper solution was obtained in a dual-ligand system.

关 键 词：化学镀铜 二元络合体系 动力学机制 控制步骤 

分 类 号：TF804.3[冶金工程—有色金属冶金] TQ028.33[化学工程]