半赫斯勒热电材料与器件研究进展  

Progress in Half-Heusler Thermoelectric Materials and Devices

作　　者：苗圃 韩屾 高梓恒 付晨光[1] 朱铁军[1] MIAO Pu;HAN Shen;GAO Ziheng;FU Chenguang;ZHU Tiejun(State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China)

机构地区：[1]浙江大学材料科学与工程学院硅材料国家重点实验室,浙江杭州310027

出　　处：《中国材料进展》2022年第12期1029-1041,1056,共14页Materials China

基　　金：国家自然科学基金资助项目(92163203)。

摘　　要：热电材料是一种可以直接实现热能与电能相互转化的新型清洁能源材料,其中半赫斯勒热电材料因其优异的高温热电性、良好的机械性能与热稳定性展现出较强的应用潜力,是极具竞争力的高温热电能量转换材料。简要回顾了近20年来半赫斯勒热电材料的发展历程,重点介绍了以ZrNiSn、NbFeSb、ZrCoSb为代表的典型18电子半赫斯勒化合物的热电输运机制特点与性能优化策略,探讨了以名义19电子半赫斯勒体系为代表的缺陷型半赫斯勒化合物的本征缺陷结构与热电输运性质,概述了半赫斯勒热电器件的最新研究成果,展望了半赫斯勒合金热电材料与器件的发展趋势。Thermoelectric materials, as a promising class of energy materials, can realize the direct conversion between heat and electricity. Half-Heusler thermoelectric materials have attracted considerable attention for high-temperature thermoelectric conversion applications due to their excellent thermoelectric and mechanical properties, and good thermal stability. Here, The development of half-Heusler thermoelectric materials in the past two decades are reviewed. The thermoelectric transport mechanism and the strategies targeting the optimization of the thermoelectric performance in typical 18-electron half-Heusler materials, for instance, ZrNiSn, NbFeSb, ZrCoSb, etc., are introduced, and the intrinsic defects and transport properties of emerging defective half-Heusler material, represented by nominal 19-electron half-Heusler system, are discussed. The recent achievements of half-Heusler thermoelectric devices are presented. Finally, the development trends of half-Heusler thermoelectric materials and devices are prospected.

关 键 词：热电材料 半赫斯勒合金 热电器件 电热输运 本征缺陷 

分 类 号：TB34[一般工业技术—材料科学与工程]