碳化硅外延设备控制系统  

Control System for SiC Epitaxy Equipment

作　　者：盛飞龙 钟新华 王鑫 伍三忠 戴科峰 仇礼钦 SHENG Feilong;ZHONG Xinhua;WANG Xin;WU Sanzhong;DAI Kefeng;QIU Liqin(JI HUA Laboratory,Foshan 528200,China)

机构地区：[1]季华实验室,广东佛山528200

出　　处：《自动化与信息工程》2022年第6期41-45,51,共6页Automation & Information Engineering

基　　金：季华实验室基金项目(X210241TC210)。

摘　　要：碳化硅(SiC)作为第三代半导体的代表材料,其生长需要精确稳定地控制高温、低压、运动、气流等。该文提出一种基于多种类现场总线的SiC外延设备控制系统,设计了软件架构、流程、交互、控制零件等。经反复的工艺运行验证,该系统的最高测量温度达到1750℃;温控精度≤1℃;压力控制精度≤1 mbar;外延最高生长速率≥60 um/h;厚度均匀性≤2%;掺杂浓度均匀性≤5%;平均修复时间(MTTR)≤8 h,以上指标均达到设计要求。Silicon carbide(SiC),as the representative material of the third generation semiconductor,its growth requires accurate and stable control of high temperature,low pressure,movement,air flow,etc.This paper proposes a SiC epitaxy equipment control system based on multi class fieldbus,and designs the software architecture,flow,interaction,control parts,etc.Through repeated process operation verification,the maximum measurement temperature of the system reaches 1750℃;temperature control accuracy≤1℃;pressure control accuracy≤1 mbar;the highest epitaxial growth rate≥60 um/h;thickness uniformity≤2%;doping concentration uniformity≤5%;mean time to repair(MTTR)≤8 h,and the above indicators meet the design requirements.

关 键 词：碳化硅 外延设备 多总线 模块化 控制系统 

分 类 号：TN304.05[电子电信—物理电子学]