基于版图设计的DICE触发器单粒子翻转加固技术  

Single event upset reinforcement technology of DICE flip-flop based on layout design

作　　者：赖晓玲 张健[2] 巨艇[2] 朱启[2] 郭阳明[1] LAI Xiaoling;ZHANG Jian;JU Ting;ZHU Qi;GUO Yangming(School of Computer Science,Northwestern Polytechnical University,Xi′an 710072,China;Xi′an Institute of Space Radio Technology,Xi′an 710199,China)

机构地区：[1]西北工业大学计算机学院,陕西西安710072 [2]中国空间技术研究院西安分院,陕西西安710199

出　　处：《西北工业大学学报》2022年第6期1305-1311,共7页Journal of Northwestern Polytechnical University

基　　金：中央高校基本科研业务费(D5000220351)资助。

摘　　要：D触发器是时序逻辑电路的基础,随着集成电路工艺尺寸进入纳米级,单粒子多节点翻转(single event multiple upset, SEMU)现象趋于严重,双互锁存单元(dual interlocked storage cell, DICE)触发器加固设计方法的抗单粒子翻转(single event upset, SEU)能力已不能满足宇航需求。基于纳米工艺下D触发器的SEU加固技术以及DICE结构的翻转机理,兼顾电路性能、面积和功耗等资源开销,提出了一种以DICE电路结构为基础的版图级抗SEU触发器设计方法,并采用商用65 nm工艺实现了一款抗SEU的D触发器设计,其面积仅为商用结构触发器的1.8倍。电路功能及辐照性能仿真表明,该触发器的建立时间和传输延迟与商用结构触发器相当,在线性传输能(linear energy transfer, LET)阈值大约为37 MeV·cm~2/mg的Ge离子轰击下没有发生SEU,触发器电路的性能和抗单粒子软错误能力表现优秀。在抗辐照专用集成电路设计中,极大节省了由加固D触发器电路所带来的面积、布线资源和时序开销。D flip-flop is the basis of timing logic circuit, and SEMU phenomenon tends to be serious with the integrated circuit process size shrinking to nanometer scale. The anti-SEU ability based on DICE structure for D flip-flop cannot meet the requirements of aerospace engineering. Based on the SEU reinforcement technology of D flip-flop under nano-technology and the SEU mechanism of DICE structure, a layout-level anti-SEU flip-flop design method based on DICE circuit structure is proposed considering the circuit performance, area, power consumption and other resource costs. And then a D flip-flop with SEU resistance is designed by commercial 65 nm process, and the designed flip-flop area is 1.8 times that of commercial structure flip-flop. The function and and radiation simulation results indicate that the establishment time and transmission delay of the flip-flop are equivalent to those of the commercial one, and no SEU occurs under the Ge ion bombardment with the LET threshold of approximately 37 MeV·cm~2/mg. The performance of the flip-flop circuit and the ability to resist single particle soft error are excellent. In the anti-radiation ASIC design, the area, wiring resources and timing overhead caused by the reinforcement of the D flip-flop circuit are greatly saved.

关 键 词：辐射效应 DICE触发器 单粒子翻转 版图加固 

分 类 号：TN783[电子电信—电路与系统]