Analytic S-Shaped Temperature Dependence of Peak Positions of the Localized-State Ensemble Luminescence and Application in the Analysis of Luminescence in Non-and Semi-Polar InGaN/GaN Quantum-Wells Micro-Array  

作　　者：Xiaorui Wang Shijie Xu 王晓瑞;徐士杰(Department of Physics,and Shenzhen Institute of Research and Innovation(HKU-SIRI),The University of Hong Kong,Pokfulam Road,Hong Kong,China;Department of Optical Science and Engineering,School of Information Science and Technology,Fudan University,Shanghai 200438,China)

机构地区：[1]Department of Physics,and Shenzhen Institute of Research and Innovation(HKU-SIRI),The University of Hong Kong,Pokfulam Road,Hong Kong,China [2]Department of Optical Science and Engineering,School of Information Science and Technology,Fudan University,Shanghai 200438,China

出　　处：《Chinese Physics Letters》2022年第10期50-54,共5页中国物理快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.12074324);Science,Technology,and Innovation Commission of Shenzhen Municipality(Grant No.JCJY20180508163404043)。

摘　　要：Two analytic expressions of temperature-dependent peak positions employing the localized-state ensemble(LSE)luminescence model are deduced for the cases ofΔE=E_(a)−E_(0)>0 and<0,respectively,under the firstorder approximation of Taylor’s expansion.Then,the deduced formulas are applied to examine the experimental variable-temperature photoluminescence data of non-and semi-polar InGaN/GaN quantum-wells(QWs)array by jointly considering the monotonic bandgap shrinking described by Passler’s empirical formula.S-shaped temperature dependence of luminescence peaks of both non-and semi-polar QWs is well reproduced with the analytic formulas.As a result,the localization depths are found to be 31.5 and 32.2 meV,respectively,for nonand semi-polar QWs.

关 键 词：INGAN/GAN LUMINESCENCE POLAR 

分 类 号：O482.3[理学—固体物理]