碲镉汞线列光导器件的失效模式及原因分析  

Failure modes and analysis for HgCdTe linear photoconductive detectors

作　　者：乔辉[1] 王妮丽[1] 兰添翼[1] 赵水平[1] 田启智 陆液[1] 王仍[1] 霍勤 施帆 汤亦聃[1] 储开慧[1] 贾嘉[1] 周青[1] 孙晓宇[1] 姜佩璐[1] 罗毅[1] 陈心恬[1] 李向阳[1] QIAO Hui;WANG Ni-Li;LAN Tian-Yi;ZHAO Shui-Ping;TIAN Qi-Zhi;LU Ye;WANG Reng;HUO Qin;SHI Fan;TANG Yi-Dan;CHU Kai-Hui;JIA Jia;ZHOU Qing;SUN Xiao-Yu;JIANG Pei-Lu;LUO Yi;CHENG Xin-Yi;LI Xiang-Yang(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]中国科学院上海技术物理研究所中科院红外成像材料与器件重点实验室,上海200083

出　　处：《红外与毫米波学报》2022年第6期1009-1021,共13页Journal of Infrared and Millimeter Waves

基　　金：上海市青年科技英才扬帆计划(19YF1454800)。

摘　　要：针对不同项目研制过程中碲镉汞线列光导器件在筛选测试和应用中出现的失效模式进行了归纳和总结,并综合碲镉汞材料参数、器件结构尺寸、器件物理、器件制备工艺和器件测试等几个方面因素对器件失效的可能原因进行了分析,首次提出碲镉汞线列光导器件的优值因子作为失效判据,为进一步理解碲镉汞线列光导器件的物理机理以及更好优化器件的筛选过程提供了参考,为碲镉汞线列光导器件应用中出现的失效问题提供了分析和解决的方向。Failure modes during screening tests and application processes have been summed up for HgCdTe linear photoconductive detectors which have been applied in several programs.The mechanisms behand these failure modes have been analyzed based on the combination of HgCdTe material parameters,device structure dimensions,detector physics,fabrication processes and device test techniques.Criteria of failure modes have been firstly proposed for deeper understanding of HgCdTe linear photoconductive detector and better optimization of detector screening process,which are also helpful for the analysis and resolution of problems encountered in the application of HgCdTe linear photoconductive detectors.

关 键 词：碲镉汞 光导器件 失效分析 

分 类 号：TN215[电子电信—物理电子学]