中/长波双色二类超晶格红外探测器技术  

Mid-wave and long-wave dual-colour type-Ⅱ superlattice infrared detector technology

作　　者：刘铭[1] 邢伟荣[1] 刘京生 周朋[1] 李景峰 温涛[1] 李海燕[1] 张露漩 陈彦冠 胡雨农 LIU Ming;XING Wei-rong;LIU Jing-sheng;ZHOU Peng;LI Jing-feng;WEN Tao;LI Hai-yan;ZHANG Lu-xuan;CHEN Yan-guan;HU Yu-nong(North China Research Institute of Electro Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2022年第12期1843-1847,共5页Laser & Infrared

摘　　要：双波段红外探测器是第三代焦平面探测器发展的重要方向之一,二类超晶格材料由于其优异的光电性能而成为制备双色红外探测器的优选材料之一。本文报道中长波双色二类超晶格器件结构设计、材料外延、读出电路设计、芯片加工、组件化等方面研究进展,通过对刻蚀以及钝化工艺进行了优化,制备出性能良好的640×512中长双色二类超晶格红外探测器,主要指标实现像元中心间距20μm,读出方式同时读出,中波波段3.5~4.8μm,长波波段7.5~9.5μm,噪声等效温差中波28.8mK、长波38.8mK,响应率非均匀性中波4.52%、长波7.89%;盲元率中波1.2%、长波1.3%,并完成成像演示,成像质量良好,为双色红外探测器工程化应用奠定了基础。Dual band infrared detectors are one of the important development directions of the third-generation focal plane detectors.Type-Ⅱ superlattice materials are one of the preferred materials for the preparation of dual-colour infrared detectors due to their excellent photoelectric properties.In this paper, the research progress in the structure design, material epitaxy, readout circuit design, chip processing and modularization of mid and long-wave dual-colour Type-Ⅱ superlattice devices are introduced.The 640×512 mid and long wave dual-color type-Ⅱ superlattice infrared detector with good performance is produced, the main index is of 20 μm pixel center spacing spacing, simultaneous readout, 3.5 ~ 4.8 μ m for medium wave band, 7.5 ~ 9.5 μ m for long wave band, noise equivalent temperature difference of 28.8 mK for medium wave and 38.8 mK for long wave, and non-uniformity of 4.52 % for medium wave and 7.89 % for long wave in response rate, blind element rate of 1.2 % for medium wave and 1.3 % for long wave.The imaging demonstration is completed with good imaging quality, laying a foundation for the engineering application of dual-color infrared detector.

关 键 词：中长双色 二类超晶格 红外探测 成像演示 

分 类 号：TN214[电子电信—物理电子学]