基于响应面法的单晶硅CMP抛光工艺参数优化  

Optimization of CMP processing parameters for Si based on response surface method

作　　者：卞达 宋恩敏 倪自丰 钱善华 赵永武 BIAN Da;SONG Enmin;NI Zifeng;QIAN Shanhua;ZHAO Yongwu(School of Mechanical Engineering,Jiangnan University,Wuxi 214122,Jiangsu,China;Jiangsu Key Laboratory of Advanced Food Manufacturing Equipment&Technology,Wuxi 214122,Jiangsu,China)

机构地区：[1]江南大学机械工程学院,江苏无锡214122 [2]江苏省先进食品制造装备技术重点实验室,江苏无锡214122

出　　处：《金刚石与磨料磨具工程》2022年第6期745-752,共8页Diamond & Abrasives Engineering

基　　金：国家自然科学基金(51675232);江苏省自然科学基金(BK20190611)。

摘　　要：为提高单晶硅化学机械抛光(chemical mechanical polishing,CMP)的表面质量和抛光速度,通过响应面法优化CMP抛光压力、抛光盘转速和抛光液流量3个工艺参数,结果表明抛光压力、抛光盘转速、抛光液流量对材料去除率和抛光后表面粗糙度的影响依次减小。通过数学模型和试验验证获得最优的工艺参数为:抛光压力,48.3 kPa;抛光盘转速,70 r/min;抛光液流量,65 mL/min。在此工艺下,单晶硅CMP的材料去除率为1058.2 nm/min,表面粗糙度为0.771 nm,其抛光速度和表面质量得到显著提高。To improve the polishing efficiency and precision, the optimum processing parameters of Si in the chemical mechanical polishing(CMP) process were analysed by CMP experiments and response surface methodology. The results show that polishing pressure has the largest influence on the material removal rate and surface roughness of Si polishing. The second largest influential factor is polishing rotational speed and the third is polishing fluid flow rate. The prediction models of material removal rate and surface roughness are established. The optimum processing parameters are obtained when the polishing pressure is 48.3 kPa, polishing rotational speed is 70 r/min and polishing fluid flow rate is 65 mL/min with the prediction models and by experiments. With these processing parameters, the material removal rate and surface roughness are 1 058.2 nm/min and 0.771 nm, respectively.

关 键 词：化学机械抛光 硅 响应面法 材料去除率 表面粗糙度 

分 类 号：TG58[金属学及工艺—金属切削加工及机床] TG73