深能级瞬态谱检测电子级多晶硅中的痕量Zn元素含量的研究应用  

Study and Application of the Detection of Trace Zn in Electronic Grade Polysilicon by Deep Level Transient Spectroscopy

作　　者：支云云 薛心禄 王志强 岳玉芳 Zhi Yunyun;Xue Xinlu;Wang Zhiqiang;Yue Yufang(Qinghai Core Measurement Technology Co.,Ltd.,Qinghai,810000;Qinghai Provincial Key Laboratory of New Energy Materials and Energy Storage Technology,Qinghai,810000)

机构地区：[1]青海芯测科技有限公司,青海810000 [2]青海省新能源材料与储能技术重点实验室,青海810000

出　　处：《当代化工研究》2023年第1期57-59,共3页Modern Chemical Research

摘　　要：本文研究用深能级瞬态谱(DLTS)分析电子级多晶硅中的痕量Zn元素含量,首先采用传统电容深能级变温测试方法,通过测试发现没有有效结果,接着对测试方法进行改进,采用光生深能级测试方式进行测试,测试结果表明在整个变温范围内瞬态曲线符合测试预期。虽然整体变温结果仍然无法进行有效数据拟合,但从测试结果表明,测试条件在137K时,发现有一相对较强特征峰,根据该峰对应的瞬态测试曲线推定是Zn元素产生的,浓度约在2×1014cm-3。In this paper, the deep level transient spectroscopy(DLTS) is used to analyze the trace zinc content in electronic grade polysilicon.First, the traditional capacitance deep level variable temperature test method is used, and no effective results are found through the test. Then, the test method is improved, and the photogenerated deep level test method is used to test. The test results show that the transient curve in the entire variable temperature range meets the test expectations. Although the overall temperature change results still cannot be fitted with valid data, the test results show that there is a relatively strong characteristic peak when the test condition is 137K. According to the corresponding transient test curve of this peak, it is inferred that it is caused by Zn element, and the concentration is about 2 × 1014cm-3.

关 键 词：深能级瞬态谱 电子级多晶硅 痕量Zn元素 

分 类 号：TQ[化学工程]