SE掺杂技术对M10单晶PERC电学性能的影响  

Effect of SE Doping Technology on Electrical Properties of M10 Single Crystal PERC

作　　者：贾艳飞 JIA Yanfei(Shanxi Institute of Mechanical and Electrical Engineering,Changzhi 046011,Shanxi,China)

机构地区：[1]山西机电职业技术学院,山西长治046011

出　　处：《能源与节能》2022年第12期168-170,203,共4页Energy and Energy Conservation

基　　金：山西机电职业技术学院校级课题(KYC-21B01)。

摘　　要：选择目前市场主流的M10单晶PERC作为研究对象,就PERC生产技术中较为通用的SE掺杂技术进行分析。通过调整SE掺杂技术中的激光划线速度及激光功率参数,对各组别硅片和电池的性能参数进行测试和数据分析。针对激光划线速度分析了参数变化对硅片方块电阻的影响,并对最终电池性能参数进行了验证。通过调整激光功率,验证方块电阻的变化,并通过ECV测试分析不同功率下掺杂浓度随结深的变化趋势,对应效果在电学性能测试中也有体现。In this paper, the current market mainstream M10 single crystal PERC was selected as the research object, and the more common SE doping technology in PERC production technology was analyzed. By adjusting the parameters of laser scribing speed and laser power in SE doping technology, the performance parameters of each group of silicon wafers and cells were tested and data were analyzed. According to the doping technology speed, the influence of parameters on the square resistance of silicon wafer was analyzed, and the final battery performance parameters were verified. By adjusting the laser power, the change of square resistance was verified, and the variation trend of doping concentration with junction depth under different power was analyzed by ECV test. The corresponding effect was also reflected in the electrical performance test.

关 键 词：激光掺杂 方块电阻 单晶PERC 激光划线速度 激光功率 

分 类 号：TM914.4[电气工程—电力电子与电力传动]