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作 者:杨帆[1] 崔岩[1] 王子祥 于昊 梁宇鑫 Yang Fan;Cui Yan;Wang Zixiang;Yu Hao;Liang Yuxin(Key Laboratory for Precision and Non-Traditional Machining Technology,Dalian University of Technology,Dalian,Liaoning 116024,China;Chongqing United Microelectronics Center Co.,Ltd.,Chongqing 400030,China)
机构地区:[1]大连理工大学精密与特种加工教育部重点实验室,辽宁大连116024 [2]重庆联合微电子中心有限责任公司,重庆400030
出 处:《机电工程技术》2022年第12期69-72,共4页Mechanical & Electrical Engineering Technology
摘 要:针对主流热光开关、静电光开关等功耗大、响应速率较慢等问题,设计出了一种以锆钛酸铅(PZT)薄膜为核心的以应力相移器驱动的MZI光开关。采用了溶胶凝胶法,在氮化硅光子芯片上制备PZT薄膜,完成应力相移器加工。为了避免PZT薄膜在高温结晶过程中所产生的应力导致MZI光开关出入光口龟裂,利用剥离-腐蚀工艺构建钛金属保护层,成功保证了MZI光开关出入光口的完整性。PZT薄膜作为应力相移器中的驱动结构,对PZT薄膜进行漏电流测试和铁电性能测试,实验证明PZT薄膜的加载电压达到25 V时还未击穿,这说明PZT薄膜具有优良的绝缘性;电滞回线较为饱和,说明PZT薄膜具备良好的铁电性。可以在光子芯片上制备出的PZT薄膜具有良好压电及铁电性能,且能够满足光子芯片需求。A new type of MZI optical switch driven by a stress phase shifter was designed to solve the problems of high power consumption and slow response rate of the mainstream thermo optic switch,such as static electro optic switch,and so on.The sol-gel method was used to fabricate PZT thin films on Silicon Nitride photonic chips to fabricate the stress phase shifter.In order to avoid the crack of MZI optical switch caused by the stress of PZT thin film during high temperature crystallization,the titanium protective layer was constructed by stripping-etching process,and the integrity of MZI optical switch was ensured successfully.As the driving structure of the stress phase shifter,the PZT thin films were tested by the leakage current and the ferroelectric properties.The experiment proves that the PZT thin films have good insulation when the loading voltage reaches 25 V,the saturation of hysteresis loop indicates that PZT films have good ferroelectric properties.The PZT thin films can be fabricated on photonic chips,which have good piezoelectric and ferroelectric properties and can meet the needs of photonic chips.
分 类 号:TB383[一般工业技术—材料科学与工程]
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