硅微尖锥冷阴极微加工及其场发射器件物理  

Micro-fabrication and Field Emission Mechanisms of Si-Tip Cold Cathodes

作　　者：陈阳[1] 章易 黄一峰 佘峻聪[1] CHEN Yang;ZHANG Yi;HUANG Yi-feng;SHE Jun-cong(State Key Laboratory of Optoelectronic Materials and Technologies,Guangdong Province Key Laboratory of Display Material and Technology,School of Electronics and Information Technology(School of Microelectronics),Sun Yat-sen University,Guangzhou 510275,China)

机构地区：[1]中山大学、光电材料与技术国家重点实验室、广东省显示材料与技术重点实验室、电子与信息工程学院(微电子学院),广东广州510275

出　　处：《真空电子技术》2022年第6期23-28,42,共7页Vacuum Electronics

基　　金：国家重点研发计划项目(2021YFA1200600)。

摘　　要：片上集成驱动控制电极的硅微尖锥是一类重要的场致电子发射阴极(冷阴极),具有驱动电压低、集成度高、加工流程与集成电路工艺兼容的特点,在微型化真空电子器件上具有应用潜力。本文介绍片上集成硅微尖锥冷阴极关键微纳加工方法及原理,分析硅微尖锥冷阴极场发射器件物理,展望硅微尖锥冷阴极的应用前景。On-chip integrated Si-tip is an important kind of field electron emission cathode(cold cathode).It has potential application in miniaturized vacuum electronic devices because of the characteristics of low driving voltage,high density integration and compatible processing flow with integrated circuit technology.The key micro/nano-fabrication methods and principles for Si-tip cold cathodes are introduced,the field electron emission mechanism is analyzed and the application prospects of them are forecasted.

关 键 词：场致电子发射 片上集成硅尖锥 自对准微加工 杂质分凝 产生电流 热助场发射 

分 类 号：TN11[电子电信—物理电子学]