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作 者:张文磊 马志涛 孙永娇 潘跃德 李刚[2] 胡杰 Zhang Wenlei;Ma Zhitao;Sun Yongjiao;Pan Yuede;Li Gang;Hu Jie(Micro-Nano System Research Center,College of Information and Computer,Taiyuan University of Technology,Jinzhong 030600,China;Institute of EnergyInnovation,College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan 030024,China)
机构地区:[1]太原理工大学信息与计算机学院微纳系统研究中心,山西晋中030600 [2]太原理工大学材料科学与工程学院能源革命创新研究院,太原030024
出 处:《微纳电子技术》2022年第11期1211-1217,共7页Micronanoelectronic Technology
基 金:国家自然科学基金资助项目(52005363,61904122)。
摘 要:氧化铁以其优异的理论比电容、大电压窗口和低成本等优势被广泛用于超级电容器的电极材料。然而,当前氧化铁电极的制备主要以不锈钢片或者泡沫镍为基底,很难与传统硅基微加工工艺相兼容,制约了其在微型超级电容器与便携式电子设备中的应用。为实现氧化铁材料与传统微纳加工方法的结合,在硅基底上依次进行钛集流体的沉积、氧化锌纳米棒的生长,并通过浸泡氯化铁溶液对氧化锌纳米棒进铁化的方法成功加载了氧化铁材料。实验中通过改变铁化的时间,研究了硅基氧化铁表面形貌、化学组分与电化学性能。通过三电极体系进行的电化学测试表明,在1.0 mol/L的硫酸钠电解质和1 mA/cm^(2)的电流密度下,硅基氧化铁的比电容为94.2 mF/cm^(2),1000次充放电循环后电容保持率为70.8%。此方法为制备高性能硅基微型超级电容器提供了新的思路和解决方案。Ferric oxide is widely used as electrode material in supercapacitors due to its prominent advantages,such as excellent theoretical specific capacitance,large voltage window and low cost.However,the recent ferric oxide-based electrodes are mainly fabricated on the stainless steel or nickel foam substrate,which has less compatibility with traditional silicon micro fabrication and restricts the further application in micro-supercapacitors and portable electronic devices.To realize the combination of iron oxide materials and traditional micro-nano processing methods,one layer of titanium current collector was deposited on the silicon substrate,followed by the fabrication of zinc oxide nanorods.The sample was soaked in ferric chloride solution to realize the ferrugination of zinc oxide nanorods and the loading of ferric material.The surface morphology,chemical composition and electrochemical performance of silicon-based ferric oxide were studied at different furrugination time in experiment.Electrochemical test with a three-electrode system indicates that in 1.0 mol/L sodium sulfate electrolyte,the specific capacitance of the silicon-based ferric oxide is 94.2 mF/cm^(2)at a current density of 1 mA/cm^(2).The capacitance retention is 70.8%after 1000 charge and discharge cycles.The method provides a new idea and solution for the preparation of high-performance silicon-based micro-supercapacitors.
分 类 号:TB383[一般工业技术—材料科学与工程]
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