基于非平衡模式的碲镉汞高工作温度探测器  

High Operation Temperature Non-equilibrium Photovoltaic HgCdTe Devices

作　　者：俞见云 孔金丞[1] 覃钢[1] 杨晋 宋林伟[1] 丛树仁[1] 李艳辉[1] YU Jianyun;KONG Jincheng;QIN Gang;YANG Jin;SONG Linwei;CONG Shuren;LI Yanhui(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2023年第1期15-22,共8页Infrared Technology

基　　金：基础加强计划技术领域项目(2019-JCJQ-JJ527)。

摘　　要：本文回顾了当前国内外高工作温度碲镉汞红外探测器的技术路线和相应的器件性能,在碲镉汞器件暗电流的温度特性分析的基础上,讨论了基于非平衡工作模式的碲镉汞探测器的基本原理、器件结构设计和暗电流机制,探讨了吸收层全耗尽碲镉汞器件性能与器件结构参数、材料晶体质量的关系,明确了其技术要点和难点,展望了碲镉汞高工作温度器件技术的发展趋势。In this paper, we review both domestic and foreign state-of-the-art high operation temperature(HOT)MCT infrared detector technologies and their corresponding device performance. Based on the analysis of the characteristics of dark current versus temperature, we summarize the working principles under the nonequilibrium operation mode, device structure design and the origin of the dark current. We also determined the relationship between the performance of the fully depleted absorber device, device structure parameters, and material quality. We also discuss the technical key points of the development of a non-equilibrium operationmode HOT infrared photodetector. Further development HOT MCT infrared detector technologies is expected.

关 键 词：碲镉汞 非平衡 俄歇抑制 全耗尽 高工作温度 

分 类 号：TN215[电子电信—物理电子学]