基于离子束溅射法制备的负温度系数Mn_(1.56)Co_(0.96)Ni_(0.48)O_(4)薄膜热敏电阻  

Negative Temperature Coefficient Mn_(1.56)Co_(0.96)Ni_(0.48)O_(4) Thin Film Thermistor Prepared by Ion Beam Sputtering Method

作　　者：武绍宽 邓勇生 潘婷 戚云娟 高波[1] 薛小婷 李莹 Wu Shaokuan;Deng Yongsheng;Pan Ting;Qi Yunjuan;Gao Bo;Xue Xiaoting;Li Ying(The 44th Institute of the Fourth Academy of CASC,Xi'an 710025,China)

机构地区：[1]中国航天科技集团公司四院四十四所,西安710025

出　　处：《微纳电子技术》2022年第12期1383-1387,共5页Micronanoelectronic Technology

摘　　要：随着当前传感器的小型化和集成化趋势热敏薄膜材料受到广泛关注。为制备电阻率低、温度性能稳定的负温度系数(NTC)热敏电阻,以Mn_(1.56)Co_(0.96)Ni_(0.48)O_(4)为研究对象,通过离子束溅射法在硅晶圆上制备热敏电阻薄膜,使用真空退火炉进行退火,成功制备出热敏电阻。采用扫描电子显微镜(SEM)对样品结构和形貌进行表征,并用恒温槽、数字万用表等对样品进行电学性能测试。结果表明采用离子束溅射法可以获得粒径小、致密和均匀性好的低电阻率热敏电阻薄膜,薄膜电阻率降低至2.18×10^(-3)Ω·cm,25℃下电阻为81.635Ω,在0~100℃测试温区内,制备的热敏薄膜材料具有明显的负温度特性。Thermal sensitive thin film materials have received extensive attention with the current trend of miniaturization and integration of sensors.To prepare the negative temperature coefficient(NTC) thermistor with low resistivity and stable temperature performance,with Mn_(1.56)Co_(0.96)Ni_(0.48)O_(4) as research object,thermistor thin films were prepared on silicon wafers by ion beam sputtering method.Vacuum annealing furnace was used for annealing,and the thermistor was successfully prepared.The structure and morphology of the sample were characterized by scanning electron microscope(SEM).The electrical properties of the sample were tested with constant temperature bath,digital multi-meter and so on.The results show that the low resistivity thermistor thin film with small particle size,compactness and good uniformity can be obtained by the ion beam sputtering method.The film resistivity reduces to 2.18×10^(-3) Ω·cm,the resistance is 81.635 Ω at 25 ℃.In the test temperature range of 0-100 ℃,the prepared thermal sensitive thin film material has obvious negative temperature characteristics.

关 键 词：热敏电阻 负温度系数(NTC) 离子束溅射 Mn_(1.56)Co_(0.96)Ni_(0.48)O_(4)薄膜 热敏薄膜 

分 类 号：TB33[一般工业技术—材料科学与工程] TN305.92[电子电信—物理电子学]