10 kV P沟道SiC IGBT终端结构优化设计与实现  

Optimal Design and Fabrication of Termination Structure for 10 kV P-channel SiC IGBT

作　　者：冯旺 刘新宇[1] 田晓丽[1] 杨雨 郑昌伟 杨成樾[1] FENG Wang;LIU Xinyu;TIAN Xiaoli;YANG Yu;ZHENG Changwei;YANG Chengyue(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China;Zhuzhou CRRC Times Semiconductor Co.,Ltd,Zhuzhou 412001,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院大学微电子学院,北京100049 [3]株洲中车时代半导体有限公司,株洲412001

出　　处：《电源学报》2023年第1期202-207,共6页Journal of Power Supply

基　　金：国家重点研发计划资助项目(2017YFB0102302);广东省重点研发计划资助项目(2019B090917010)。

摘　　要：提出采用五区多重场限环FRM-FLRs(five-region multistep field limiting rings)终端设计并流片,研制10 kV P沟道碳化硅绝缘栅双极晶体管SiC IGBT(silicon carbide insulated gate bipolar transistor)终端。通过Silvaco TCAD软件仿真,对比研究传统等间距场限环ES-FLRs(equally spaced field limiting rings)终端和五区多重场限环终端对器件击穿特性的影响。仿真结果表明,五区多重场限环终端具有更均衡的近表面电场分布,减缓电场集中,优化空间电荷区横向扩展,且击穿电压可达到14.5 kV,而等间距场限环终端击穿电压仅为7.5 kV。同时,分别对五区多重场限环终端,以及采用此终端结构的P沟道SiC IGBT进行流片验证。测试结果表明,五区多重场限环终端可以实现12.2 kV的击穿电压;P沟道SiC IGBT的击穿电压达到10 kV时,漏电流小于300 nA,并且栅源电压为-20 V,集电极正向电流为-10 A时,器件的正向导通压降为-8 V。A five-region multistep field limiting rings(FRM-FLRs)edge termination technique for 10 kV P-channel silicon carbide(SiC)insulated gate bipolar transistor(IGBT)was designed and fabricated in this paper.The influences of equally spaced field limiting rings(ES-FLRs)and FRM-FLRs terminations on the device’s breakdown characteristics were compared and analyzed through simulations using the Silvaco TCAD software.Simulation results show that the FRMFLRs termination structure has a uniform near-surface electric field distribution,which alleviates the crowded edge electric field effect and optimizes the lateral expansion of the space charge region.The breakdown voltage of the FRMFLRs termination structure can reach 14.5 kV,while that of the ES-FLRs termination structure with the same termination area was only 7.5 kV.At the same time,the FRM-FLRs termination and the P-channel SiC IGBT with the same termination were fabricated,and results show that the measured breakdown voltage of 12.2 kV for the FRM-FLRs termination and that of 10 kV with a leakage current below 300 nA for the P-channel SiC IGBT were achieved,respectively.Meanwhile,a forward voltage drop of-8 V was obtained at the collector current of-10 A with a gate bias of-20 V.

关 键 词：碳化硅 绝缘栅双极晶体管 五区多重场限环 击穿电压 

分 类 号：TN335[电子电信—物理电子学]