HfO_(2)铁电薄膜基MFIS存储结构中的高κ介电晶籽层效应研究:铁电正交相生长和界面电荷注入抑制  

Growth of the orthorhombic phase and inhibition of charge injection in ferroelectric HfO_(2)-based MFIS memory devices with a high-permittivity dielectric seed layer

作　　者：张岩 王岛 王佳丽 罗春来 李明 李育珊 陶瑞强 陈德扬 樊贞 戴吉岩 周国富 陆旭兵 刘俊明 Yan Zhang;Dao Wang;Jiali Wang;Chunlai Luo;Ming Li;Yushan Li;Ruiqiang Tao;Deyang Chen;Zhen Fan;Ji-Yan Dai;Guofu Zhou;Xubing Lu;Jun-Ming Liu(Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China;Guangdong Provincial Key Laboratory of Optical Information Materials and Technology,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China;Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong,China;Institute of Electronic Paper Displays,South China Academy of Advanced Optoelectronics and National Center for International Research on Green Optoelectronics,South China Normal University,Guangzhou 510006,China;Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China)

机构地区：[1]Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China [2]Guangdong Provincial Key Laboratory of Optical Information Materials and Technology,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China [3]Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong,China [4]Institute of Electronic Paper Displays,South China Academy of Advanced Optoelectronics and National Center for International Research on Green Optoelectronics,South China Normal University,Guangzhou 510006,China [5]Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China

出　　处：《Science China Materials》2023年第1期219-232,共14页中国科学（材料科学（英文版）

基　　金：supported by the National Natural Science Foundation of China(62174059,51872099,and 91963102);Hong Kong Research Grant Council(15300619);Science and Technology Program of Guangzhou(201905-0001);Guangdong Science and Technology ProjectInternational Cooperation(2021A0505030064);the Program for Chang Jiang Scholars and Innovative Research Teams in Universities(IRT_17R40);the 111 Project。

摘　　要：HfO_(2)基材料铁电场效应晶体管(FeFET)商业化应用面临的一个重要挑战是其疲劳特性差.本文提出,在基于金属-铁电-绝缘层-半导体(MFIS)栅叠层结构的FeFET中研发合适的高κ界面晶籽层(SL)以大幅度提升其疲劳性能.我们在ZrO_(2),HfO_(2),(HfO_(2))0.75(Al_(2)O_(3))0.25(HAO)和Al_(2)O_(3)等典型的高κ介电SL上制备了Hf_(0.5)Zr_(0.5)O_(2)(HZO)铁电薄膜,系统研究了HZO薄膜的微观结构、铁电性及其MFIS器件的存储特性.首先,揭示了HZO薄膜中铁电正交相的形核和生长不仅受高κ介电SL表面能的影响,而且其微观结构对HZO中正交相的形成也起到重要作用.其次,澄清了高κ介电晶籽层对MFIS结构存储特性的影响,通过精确计算的MFIS结构的界面层电场,对MFIS结构的存储特性做出了合理解释.最后,基于HAO的高κSL的MFIS器件实现了铁电极化和界面电荷注入之间的合理优化,并且获得了较大铁电存储窗口(>1.0 V),出色的保持特性(>1.6×104s)和疲劳特性(>105).本文为未来解决HfO_(2)基Fe FET的疲劳问题提供了有价值的思路,为在介电SL上生长HfO_(2)铁电薄膜的其他高性能电子器件的开发提供了参考.The poor endurance of the ferroelectric(FE)HfO_(2)(Fe-HfO_(2))material-based FE field-effect transistor(FeFET)remains a major challenge for its future commercial production.Here we propose a high-κinterface seed layer(SL)in the metal-FE-insulator-semiconductor(MFIS)gate stack to address this issue.We fabricated Hf_(0.5)Zr_(0.5)O_(2)(HZO)FE thin films on various high-κdielectric SLs,including ZrO_(2),HfO_(2),(HfO_(2))0.75(Al_(2)O_(3))0.25(HAO),and Al_(2)O_(3),and investigated their microstructures,ferroelectricity,and memory characteristics in the MFIS devices.The results show that the nucleation and growth of the FE orthorhombic phase in HZO films are affected not only by the surface energy but also by the microstructure of the high-κSL.Additionally,we clarified the role of the high-κSL on the memory characteristics of the MFIS devices,which were reasonably explained by the accurately calculated interface electric field.Finally,we realized a good tradeoff between the FE polarization and interface charge injection in the MFIS device with HAO high-κSL,demonstrating a large FE window(>1.0 V),excellent retention(>1.6×10~4s),and endurance cycles(>105).The results will provide valuable ideas to overcome the challenge of endurance in the Fe-HfO_(2)-based Fe FET and contribute to developing other high-performance electron devices with Fe-HfO_(2)films grown on a dielectric SL.

关 键 词：存储特性 存储结构 铁电薄膜 商业化应用 MFIS 铁电存储 疲劳特性 叠层结构 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]