影响VGF法GaAs-Si单晶成品率的因素  

Factors Affecting the Yield of GaAs-Si Monocrystalline in the VGF Method

作　　者：王金灵 罗小龙 Wang Jinling;Luo Xiaolong(Vital Micro-Electronics Technology Co.,Ltd.,Qingyuan 511517;National Engineering Research Center for Dilute Metals,Vital Materials Co.,Limited.All Rights Reserved,Qingyuan 511517,China)

机构地区：[1]广东先导微电子科技有限公司,广东清远511517 [2]国家稀散金属工程技术研究中心广东先导稀材股份有限公司,广东清远511517

出　　处：《广东化工》2022年第23期21-23,共3页Guangdong Chemical Industry

摘　　要：阐述了现有VGF法GaAs-Si单晶生长过程中影响晶体成品率的各种因素。实验过程利用单晶生长炉进行生产出4英寸GaAs-Si单晶,使用磨床除去晶棒表面氧化层,再用氢氧化铵、过氧化氢和纯水按2∶1∶1浸泡,纯水冲洗干净,用纸巾擦干晶棒表面。通过对晶体外观检测颜色差异性,用Hall测试仪检测晶体电性能、电子显微镜查看EPD等,判断砷化镓单晶的成品率及存在的缺陷问题。通过讨论了坩埚形状,坩埚质量,坩埚烘烤,GaAa原料清洗效果、石英管质量、晶体生长速度、生长温度、环境湿度和环境杂质9种因素对单晶生长的影响,基本解决了VGF砷化镓单晶生长成品率中的关键问题。This paper describes the various factors affecting crystal yield during the growth process of GaAs-Si by the existing VGF method. The experimental process uses a single crystal growth furnace to produce 4-inch GaAs-Si single crystals, use a grinder to remove the oxide layer on the surface of the crystal rod, and then soak it at 2∶1∶1 with ammonium hydroxide, hydrogen peroxide and pure water, rinse it with pure water, and wipe the surface of the crystal rod dry with a paper towel. By detecting the color difference in the appearance of the crystal, the Hall tester is used to detect the electrical properties of the crystal, and the ELECTRON microscope is used to view the EPD, etc., and the yield rate and defects of gadium arsenide single crystal are determined. By discussing the influence of crucible shape, crucible quality, crucible baking, GaAa raw material cleaning effect, quartz tube quality, crystal growth rate, growth temperature, ambient humidity and environmental impurities on the monocrystalline growth, the key problems in the monocrystalline growth yield of gallium arsenide VGF were basically solved.

关 键 词：成品率 砷化镓 单晶生长 VGF生长法 孪晶 

分 类 号：TQ[化学工程]