基于碳掺杂InGaAs材料的InP DHBT分子束外延生长研究  

Molecular Beam Epitaxy of InP DHBT Based on Carbon Doped InGaAs Material

作　　者：于海龙 高汉超[1] 王伟 马奔 尹志军[1] 李忠辉[1] YU Hailong;GAO Hanchao;WANG Wei;MA Ben;YIN Zhijun;LI Zhonghui(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]微波毫米波单片和集成电路重点实验室,南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2022年第6期505-509,共5页Research & Progress of SSE

摘　　要：采用固态源分子束外延系统(SSMBE),以四溴化碳(CBr_(4))作为碳掺杂源,研究基于碳掺杂InGaAs材料的InP双异质结双极晶体管(DHBT)分子束外延生长工艺。通过In原子补偿工艺,补偿基区InGaAs材料中被CBr_(4)刻蚀的In原子,调整In组分使InGaAs-C外延层与InP衬底晶格匹配。通过界面层Ⅴ族元素切换工艺,减少InP/InGaAs界面层四元合金材料的形成,避免四元合金界面对后续湿法工艺的影响,降低材料表面粗糙度。利用优化后的材料外延工艺,得到表面颗粒密度为15/cm^(2),基区InGaAs-C材料P型掺杂浓度为5.25×10^(19)cm^(-3),方阻非均匀性为0.5%的InP基DHBT完整结构材料,利用0.7μm InP DHBT工艺平台,得到增益为41、击穿电压为4 V、截止频率为341 GHz、最大震荡频率为333 GHz的InP基DHBT器件。Using solid source molecular beam epitaxy(SSMBE)system and carbon tetrabromide(CBr_(4))as carbon doping source,the epitaxy process of double heterojunction bipolar transistor(DH-BT)on InP substrates based on carbon doped InGaAs material was systematically studied.The In atoms of InGaAs material can be etched by CBr_(4)and compensated by In atom compensation process.Adjust the In composition to match the InGaAs–C material to the InP substrate lattice.Through the interface V group element switching process,the influence of interface of quaternary alloy on subsequent wet etching process can be avoided and the formation of quaternary and roughness of the InP/InGaAs material can be reduced.Using the optimized material epitaxy,the InP-based DHBT materials can be obtained,which of particle density is 15/cm^(2),P-type doping concentration of InGaAs-C material in base-region is 5.25×10^(19)cm^(-3)and sheet resistivity nonuniformity is 0.5%.Through 0.7μm InP DHBT process platform,the InP DHBT have been successfully fabricated,which DC current gain is41,breakdown voltage is 4.0 V,cut-off frequencies is 341 GHz and maximum oscillation frequency is333 GHz.

关 键 词：分子束外延 双异质结晶体管 铟镓砷 四溴化碳 

分 类 号：TN304.2[电子电信—物理电子学]