碲锌镉衬底晶面极性对水平液相外延碲镉汞薄膜的影响  

Effect of polarity of CdZnTe substrate on slider liquid phase epitaxy of HgCdTe

作　　者：霍勤 张诚[1] 焦翠灵[1] 王仍[1] 毛诚铭 陆液[1] 乔辉[1] 李向阳[1] HUO Qin;ZHANG Cheng;JIAO Cui-Ling;WANG Reng;MAO Cheng-Ming;LU Ye;QIAO Hui;LI Xiang-Yang(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083

出　　处：《红外与毫米波学报》2023年第1期1-7,共7页Journal of Infrared and Millimeter Waves

基　　金：国家重点研发计划(2018YFB0504700);上海市青年科技英才扬帆计划(19YF1454800)。

摘　　要：研究了碲锌镉衬底(111)晶面的不同极性对水平推舟液相外延生长碲镉汞薄膜的影响。实验结果显示,(111)A面碲锌镉衬底水平液相外延生长碲镉汞薄膜材料组分和厚度均与常规(111)B面碲锌镉衬底碲镉汞薄膜材料相当;碲镉汞母液在采用(111)A面、(111)B面衬底进行液相外延生长的碲镉汞薄膜上接触角分别为(50±2)°和(30±2)°,结合微观模型分析确认碲镉汞母液在碲镉汞薄膜(111)A面存在更大的表面张力;观察并讨论了(111)A面碲镉汞与(111)B面碲镉汞薄膜材料表面微观形貌的差别;实验获得的(111)A面碲镉汞薄膜XRD半峰宽为33.1arcsec。首次报道了(111)晶面选择对母液残留的影响,研究结果表明,采用(111)A面碲锌镉衬底进行碲镉汞水平推舟液相外延生长,能够在不降低晶体质量的情况下,大幅减小薄膜表面母液残留。The effect of Cd Zn Te substrates with different polarity(111)plane on slider liquid phase epitaxalgrowth of Hg1-xCdxTe was studied.The experimental results show that the composition and thickness of Hg Cd Te films grown by slider liquid phase epitaxy on(111)A surface Cd Zn Te substrate were equivalent to those on conventional(111)B sur‐face Cd Zn Te substrate.The contact angles between Hg Cd Te melt and(111)A surface and(111)B surface of Hg Cd Te films grown on Cd Zn Te substrate were respectively(50±2)°and(30±2)°.It is confirmed that the surface tension be‐tween Hg Cd Te melt and(111)A surface of Hg Cd Te film is larger combined with micro model analysis.The difference between the surface morphology of Hg Cd Te film grown on(111)A surface and that on(111)B surface was observed and discussed.The FWHM of the Hg Cd Te film grown on(111)A surface was 33.1 arcsec.The effect of(111)plane polarity on melt droplet is reported for the first time,and the results show that slider liquid phase epitaxy of Hg1-xCdxTe on(111)A surface Cd Zn Te substrate can greatly reduce melt droplet of the film without reducing the crystal quality.

关 键 词：Hg1-xCdxTe晶体 CdZnTe衬底 液相外延 (111)A面 (111)B面 

分 类 号：TN213[电子电信—物理电子学]