Ku波段GaN大功率高效率功率放大器MMIC  

Ku-Band GaN High Power High Efficiency Power Amplifier MMIC

作　　者：王生国[1,2] 高茂原 边照科 王彪 韩雷 刘帅[1] Wang Shengguo;Gao Maoyuan;Bian Zhaoke;Wang Biao;Han Lei;Liu Shuai(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;Science and Technology on ASIC Laboratory,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2022年第12期1009-1013,共5页Semiconductor Technology

摘　　要：采用0.25μm栅长GaN高电子迁移率晶体管(HEMT)工艺,研制了一款Ku波段高输出功率放大器单片微波集成电路(MMIC)。在器件结构上,通过优化场板尺寸参数提高器件的击穿电压,提升了其静态工作电压。在电路设计上,优化匹配结构以实现输出功率和效率的最佳匹配。测试结果表明,在14~16 GHz,功率放大器MMIC实现了饱和输出功率大于100 W,功率附加效率大于40%。该48 V Ku波段GaN功率放大器MMIC具有高电压、大功率、高效率的特点,具有广阔的应用前景。By using 0.25μm gate length GaN high electron mobility transistor(HEMT)technology,a Ku-band high output power amplifier monolithic microwave integrated circuit(MMIC)was developed.In the device structure,the breakdown voltage of the device was improved by optimizing the dimensions of the field plate,and the static operating voltage was also improved.In the circuit design,the matching structure was optimized to achieve the best matching of output power and efficiency.The test results show that the power amplifier MMIC achieves a saturated output power of more than 100 W and a power added efficiency(PAE)of more than 40%at 14-16 GHz.The 48 V Ku-band GaN power amplifier MMIC has the characteristics of high voltage,high power and high efficiency,and has a wide application prospect.

关 键 词：功率放大器(PA) 高电子迁移率晶体管(HEMT) KU波段 输出功率 场板 单片微波集成电路(MMIC) 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.75