基于DBR结构的蓝光及白光GaN LED的制备及光学性能改善  

Preparation and Optical Performance Improvement of Blue and White GaN LEDs Based on DBR Structure

作　　者：胡涛[1] 朱友华[1] 钟岱山 王美玉[1] 李毅[1] Hu Tao;Zhu Youhua;Zhong Daishan;Wang Meiyu;Li Yi(School of Information Science and Technology,Nantong University,Nantong 226019,China)

机构地区：[1]南通大学信息科学技术学院,江苏南通226019

出　　处：《半导体技术》2023年第1期18-24,共7页Semiconductor Technology

基　　金：国家自然科学基金面上项目(61874168);江苏省产学研项目(BY2022236);企业横向项目(21ZH626,22ZH003)。

摘　　要：为改善GaN基发光二极管(LED)的光学性能,设计并制备了具有高反射率与宽反射带宽的SiO_(2)/Ti3O5分布式布拉格反射镜(DBR)结构的蓝光和白光GaN LED。制备了具有不同周期数的DBR结构,其中,17周期DBR结构在400~660 nm波长内平均反射率超过99.3%,其反射带宽度达到231 nm。测试并比较了封装后的基于DBR结构的LED芯片的电学与光学特性。通过电流-光输出功率(I-L)特性测试,发现具有17周期DBR结构的蓝光LED的光输出功率比5周期的提升了6.7%,而白光LED的光输出功率则提升了9.7%。在约100 mA的直流注入电流下,蓝光和白光LED的最大光输出功率分别达到134.9 mW和108.4 mW。In order to improve the optical performance of GaN-based light emitting diode(LED),blue and white GaN LEDs with SiO_(2)/Ti3O5distributed Bragg reflector(DBR)structure with high reflectivity and wide reflection width were designed and fabricated.DBR structures with different cycles were prepared.The average reflectivity of the 17-cycle DBR structure exceeds 99.3%in the wavelength range of 400-660 nm,and the reflection width reaches 231 nm.The electrical and optical characteristics of the packaged LED chips based on DBR structure were measured and compared.The current-light output power(I-L)characteristic measurement results show that the light output power of the blue LED with 17-cycle DBR structure increases by 6.7%than that of the blue LED with 5-cycle DBR structure,and the light output power of the white LED increases by 9.7%.At the injected DC current of about 100 mA,the maximum light output powers of blue and white LEDs are 134.9 mW and 108.4 mW,respectively.

关 键 词：GaN发光二极管(LED) 离子辅助沉积 分布式布拉格反射镜(DBR) 光输出功率 平均反射率 

分 类 号：TN364.2[电子电信—物理电子学]