一种集成环行器的X波段三维异构集成T/R模组  

An X-Band 3D Heterogeneous Integration T/R Module with Integrat Circulator

作　　者：彭桢哲 李晓林 董春晖 赵宇[1] 吴洪江[1] Peng Zhenzhe;Li Xiaolin;Dong Chunhui;Zhao Yu;Wu Hongjiang(The13'hResearch Institute,CETC,Shjiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2023年第1期37-42,共6页Semiconductor Technology

摘　　要：微电子机械系统(MEMS)环行器被广泛应用于射频(RF)T/R微系统中,解决共用天线且收发隔离的问题。基于硅基三维(3D)异构集成工艺,设计了一种集成MEMS环行器的X波段T/R模组。该模组以高阻硅为介质基板,在硅基板上、下表面电镀金属图形,并堆叠多层硅基晶圆,在硅基模组上封装了集成无源器件(IPD)环行器,完成了多种微波芯片和MEMS环行器的系统级封装(SiP),将环行器紧凑集成在硅基T/R模组中。模组尺寸为12.0 mm×11.3 mm×2.0 mm。测试结果表明,在8~12 GHz频带内,模组接收通道增益为27 dB,接收通道噪声系数小于3.2 dB;发射通道增益为33 dB,饱和输出功率大于2 W。Micro-electromechanical system(MEMS) circulator is widely used in radio frequency(RF) T/R microsystems to solve the problem that receiving channel and transmitting channel share the same antenna but need to be isolated.An X-band T/R module with integrated circulator was designed based on silicon-based three-dimensional(3D) heterogeneous integration technology.High-resistance silicon was used as the dielectric substrate in the module.Multi-layer silicon-based wafer-stacking technology was used to realize the integrated passive device(IPD) circulator packaged in the silicon-based module.Therefore the system in package(SiP) integrating a variety of microwave chips and MEMS circulator was realized, and compactly integrated the circulator in the silicon-based T/R module.The size of the module is 12.0 mm×11.3 mm×2.0 mm.Test results show that within the frequency band of 8-12 GHz, the receiving channel gain of the module is 27 dB,the receiving channel noise figure is less than 3.2 dB,the transmitting channel gain is 33 dB,and the saturated output power is more than 2 W.

关 键 词：微电子机械系统(MEMS)环行器 射频(RF)微系统 硅基三维(3D)异构集成 硅基T/R模组 系统级封装(SiP) 

分 类 号：TN454[电子电信—微电子学与固体电子学]