硅光电倍增管在辐射探测领域中的应用进展  

Application Progress of Silicon Photomultiplier in Radiation Detection

作　　者：仵欣杰 叶海福 艾杰[1] 张也平 Wu Xinjie;Ye Haifu;Ai Jie;Zhang Yeping(Institute of Fluid Physics,China Academy of Engineering Physics,Mianyang 621000,Sichuan,China)

机构地区：[1]中国工程物理研究院流体物理研究所,四川绵阳621000

出　　处：《激光与光电子学进展》2022年第21期42-53,共12页Laser & Optoelectronics Progress

基　　金：中国工程物理研究院院长基金。

摘　　要：光子探测技术在高能物理、天体物理、医学成像等学科领域中扮演着重要的角色。特别是在辐射探测应用中,实现单光子高水平的灵敏探测一直是近几十年以来光电探测器发展的最终目的。硅光电倍增管(SiPM)技术作为理想固态光子探测器研究领域前所未有的尝试,凭借其出色的性能(增益高、偏置电压低、时间响应快速、对磁场不敏感等),吸引着越来越多研究者的关注。围绕SiPM的结构原理,回顾、分类、总结了SiPM在结构、性能及应用等方面近年来取得的研究进展。Photon detection technology plays an important role in highenergy physics,astrophysics,medical imaging and other disciplines.Especially in radiation detection applications,it has been the ultimate goal of photodetector development in recent decades to achieve highlevel sensitive detection of single photons.Silicon photomultiplier(SiPM)technology is an unprecedented attempt in the field of ideal solidstate photon detectors.With its excellent performance(high gain,low bias voltage,fast time response,magnetic field insensitivity,etc.),SiPM technology is attracting more and more researchers’attention.Focusing on the structure principle of SiPM,this paper reviews,classifies and summarizes the research progress of SiPM in the aspects of structure,performance and application in recent years.

关 键 词：硅光电倍增管 辐射探测 雪崩光电二极管 综述 

分 类 号：TN29[电子电信—物理电子学]