一种新型SiC MOSFET驱动电路的设计  

Design of a New SiC MOSFET Drive Circuit

作　　者：王树增 张一鸣 王旭红 张栋 WANG Shu-zeng;ZHANG Yi-ming;WANG Xu-hong;ZHANG Dong(Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学信息学部电磁理论与新技术研究中心,北京100124

出　　处：《电力电子技术》2023年第2期125-128,共4页Power Electronics

基　　金：地球深部探测技术攻关专项(Z181100005718001)。

摘　　要：与传统硅基器件相比,碳化硅(SiC)器件的开关速度得到大幅改善,提高了变换器的功率密度与效率。然而过大的开关频率引起更为严重的栅极串扰问题,造成器件失效。分析了SiC金属-氧化物-半导体场效应晶体管(MOSFET)的开关过程与串扰产生原理,详述其设计过程,分析了外并电容的抑制串扰驱动电路,最后设计出一种带有信号隔离功能的可抑制栅极串扰的负压驱动电路。实验结果表明,所设计的SiC MOSFET驱动电路的驱动波形高低电平分明,而且有效抑制了栅极串扰问题,大幅减小器件的开关延时时间,降低了开关损耗。Compared with traditional silicon-based devices,the switching speed of silicon carbide(SiC) devices has been greatly improved,the power density and efficiency of the converter have been improved.However,excessive switching frequencies cause more serious gate crosstalk problems,resulting in device failure.Firstly,the switching process and crosstalk generation principle of SiC metal-oxide-semiconductor field effect transistor(MOSFET) is analyzed,then its design process is detailed,and the crosstalk suppression driving circuit of external shunt capacitor is analyzed.Finally,a negative voltage driving circuit with signal isolation function is designed to suppress crosstalk of gate.The experimental results show that the proposed SiC MOSFET drive circuit has clear driving waveform,and can effectively suppress the grid cross talk,greatly reduce the switching delay time of the device,and reduce the switching loss.

关 键 词：金属-氧化物-半导体场效应晶体管 串扰 驱动电路 

分 类 号：TN32[电子电信—物理电子学]