基于增材制造技术的电枢结构优化与试验研究  被引量:3

Structure optimization and experimental study of armature based on additive manufacturing technology

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作  者:张庆霞 李军[1] 刘坤[1] 张沫 黄声野 郭学佳 ZHANG Qingxia;LI Jun;LIU kun;ZHANG Mo;HUANG Shengye;GUO Xuejia(The PLA Unit 32178,Beijing 100012,China;China South Industry Academy,Beijing 102209,China)

机构地区:[1]中国人民解放军32178部队,北京100012 [2]中国兵器装备研究院,北京102209

出  处:《兵器材料科学与工程》2023年第1期13-18,共6页Ordnance Material Science and Engineering

基  金:国家自然科学基金(51237007)。

摘  要:基于拓扑结构设计技术,以C型电枢为例,依据发射过程中电枢受力及内部电流分布,用点阵结构拓扑优化电枢内部,设计并通过增材制造加工出半拓扑和全拓扑结构两种电枢,优化后的电枢较原电枢分别减质量37%和47%。通过发射试验,在峰值电流约550 kA时全拓扑结构电枢解体,半拓扑结构电枢在800 kA电流时仍可正常发射。结果表明:同样输入能量下,半拓扑优化电枢在发射电流为550、650、750、800 kA时,炮口速度分别提高了13.3%、11.3%、9.0%、5.0%,增材制造技术可为电枢轻量化设计提供新技术。Based on topological structure design technology,the research taked C-type armature as an example,analysed the force and internal current distribution of the armature during the launch,and then optimized the internal topology of the armature by using the lattice structure.Armatures with semi and full-topological structures were successful designed and produced through additive manufacturing.The weights of these two optimized armatures were reduced by 37%and 47%respectively compared with the original armatures.Through the launch test,the armature with full-topological structure disintegrated when the peak current was about 550k A,while the armature with semi-topological structure still completed the launch when the current was 800 k A.The results show that under the same energy input,the muzzle velocity increases by 13.3%,11.3%,9.0%and 5.0%respectively when the launch current of the armature with semi-topological structure is 550 k A,650 k A,750 k A and 800 k A.Additive manufacturing technology provides a new technical method for the lightweight design of armature.

关 键 词:电磁发射 C型电枢 拓扑结构 增材制造技术 轻量化 

分 类 号:E92[军事—军事装备学]

 

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