面向高电子迁移率晶体管的κ-Ga_(2)O_(3)/GaN铁电/极性半导体异质结  

κ-Ga_(2)O_(3)/GaN ferroelectric/polar semiconductor heterojunction for high electron mobility transistors

作　　者：韩根全[1] HAN GenQuan(School of Microelectronics,Xidian University,Xi'an710071,China)

机构地区：[1]西安电子科技大学微电子学院,西安710071

出　　处：《中国科学：物理学、力学、天文学》2023年第1期158-160,共3页Scientia Sinica Physica,Mechanica & Astronomica

摘　　要：极性半导体异质结构是通过极化调控实现多功能、高性能先进电子器件的一种有效策略.南京大学叶建东团队报道了κ-Ga_(2)O_(3)/GaN铁电/极性半导体的II型异质结构,基于外场调控实现了κ-Ga_(2)O_(3)的铁电极化翻转,并揭示了极化电荷形成的电偶极子是导致界面能带弯曲的物理起源.基于界面能带偏移和铁电极化翻转,有望实现界面二维电子气在积累和耗尽状态切换,为发展基于铁电/极性半导体异质结的高电子迁移率晶体管、铁电非易失性存储器和超低功耗负电容晶体管等提供有效参考.Polar semiconductor heterostructures offer an alternative strategy to manipulate polarization towards advanced devices with engineered functionality and improved performance.Recently,Prof.Jiandong Ye’s group from Nanjing University reported on a novelκ-Ga_(2)O_(3)/GaN ferroelectric/polar heterojunction with switchable polarization under external electric field.A type-II band alignment is determined at theκ-Ga_(2)O_(3)/GaN polar hetero-interface,with charge dipoles induced by spontaneous polarization leading to the observed band bending.Benefiting from the large band discontinuity and ferroelectric manipulation,it is expected to realize the switching of the interfacial two-dimensional electron gas between accumulation and depletion states,which allows the rational design ofκ-Ga_(2)O_(3)ferroelectric/polar heterojunctions for the application of high electron mobility transistors,ferroelectric non-volatile memories and even ultra-low loss negative capacitance transistors.

关 键 词：氧化镓 铁电 极化 异质结 

分 类 号：TN386[电子电信—物理电子学]