利用W形空穴阻挡层降低AlGaN基深紫外激光二极管的空穴泄露  

Reduction of hole leakage in AlGaN-based deep ultraviolet laser diodes by using a W-shaped hole blocking layer

作　　者：贾李亚 张鹏飞 张傲翔 王芳[1,2,3,4] 刘俊杰[1,2,4] 刘玉怀 JIA Li-Ya;ZHANG Peng-Fei;ZHANG Ao-Xiang;WANG Fang;LIU Jun-Jie;LIU Yu-Huai(National Center for International Joint Research of Electronic Materials and Systems,International Joint-Laboratory of Electronic Materials and Systems of Henan Province,School of Information Engineering,Zhengzhou University,Zhengzhou 450001,China;Research Institute of Sensors,Zhengzhou University,Zhengzhou 450001,China;Research Institute of Industrial Technology Co.Ltd.,Zhengzhou University,Zhengzhou 450001,China;Zhengzhou Way Do Electronics Co.Ltd.,Zhengzhou 450001,China)

机构地区：[1]郑州大学信息工程学院电子材料与系统国际联合研究中心河南省电子材料与系统国际联合实验室,郑州450001 [2]郑州大学传感器研究院,郑州450001 [3]郑州大学产业技术研究院有限公司,郑州450001 [4]郑州唯独电子科技有限公司,郑州450001

出　　处：《原子与分子物理学报》2023年第5期105-110,共6页Journal of Atomic and Molecular Physics

基　　金：国家自然科学基金(62174148);国家重点研发计划(SQ2021YFE010807,2016YFE0118400);智汇郑州·1125聚才计划(ZZ2018-45);宁波2025科技创新重大专项(2019B10129)。

摘　　要：本文设计了V形和W形的空穴阻挡层(HBL)结构,改善空穴在AlGaN基深紫外激光二极管(DUV-LD)n型区的泄露问题.使用Crosslight软件,将参考型矩形、V形和W形三种空穴阻挡层结构进行仿真研究,分别比较了三种不同结构的DUV-LD能带、n区空穴浓度、辐射复合率、电光转换效率、有源区载流子浓度等特性,结果表明,具有W形空穴阻挡层的DUV-LD拥有更高的空穴有效势垒高度、更高的辐射复合率、更低的空穴泄露以及更好的斜率效率,可以有效降低深紫外激光二极管在n型区的空穴泄露,提升其光学和电学性能.In this paper,V-shaped and W-shaped hole blocking layer(HBL)structures are designed to reduce the hole leakage into the n-type region of AlGaN-based deep ultraviolet laser diodes(DUV-LDs).DUV-LDs with reference rectangular,V-shaped and W-shaped hole-blocking layer structures are simulated by Crosslight software.Numerical research on the energy band,n-region hole concentration,radiative recombination rate,electro-optical conversion efficiency,output power,carrier concentration in the active region and other characteristics of the three different structures,are conducted respectively.The results show that DUV-LD with a W-shaped hole blocking layer has higher hole effective barrier height,higher radiative recombination rate,lower hole leakage and better slope efficiency,which can effectively reduce the hole leakage in the n-type region of the deep ultraviolet laser diode,and improve its optical and electrical performance.

关 键 词：ALGAN 深紫外激光二极管 空穴阻挡层 空穴泄露 

分 类 号：O64[理学—物理化学]