基于GaAs衬底的功分器芯片设计  

Design of Power Divider Chip Based on GaAs Substrate

作　　者：韦雪真 白银超 王朋 郝志娟 WEI Xuezhen;BAI Yinchao;WANG Peng;HAO Zhijuan(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技公司第十三研究所,河北石家庄050051

出　　处：《电声技术》2022年第10期121-123,共3页Audio Engineering

摘　　要：依据Wilkinson功分器原理,将四分之一波长传输线等效为集总参数电路,在GaAs衬底上设计并实现一款20~30 GHz宽带功分器芯片。通过工艺线提供的衬底设置和电磁仿真软件建模仿真优化,功分器的测试结果和仿真结果具有较高的一致性。芯片尺寸为0.9 mm×0.7 mm×0.1 mm。探针台在片测试结果表明,功分器芯片在设计带宽20~30 GHz内,插入损耗小于4 dB,隔离度大于20 dB,输入回波损耗和输出回波损耗均优于15 dB,具有低损耗、高隔离、驻波好、面积小、成本低的优良特性。Based on the Wilkinson power splitter principle,a 20~30 GHz broadband power splitter chip is designed and implemented on GaAs substrate,which is equivalent to a quarter wavelength transmission line as a lumped parameter circuit.Through the substrate setup provided by the process line and simulation optimization of the electromagnetic simulation software,the test results of the power divider have a high consistency with the simulation results.The chip size is 0.9 mm.0.7 mm.0.1 mm.The on-chip test results of the probe station show that the power splitter chip has the advantages of low loss,high isolation,and low cost,with the insertion loss less than 4 dB and the isolation greater than 20 dB in the design bandwith of 20~30 GHz.The input return loss and outout return loss are both better than 15 dB.

关 键 词：WILKINSON功分器 GAAS衬底 插入损耗 

分 类 号：TN912.2[电子电信—通信与信息系统]