基于高导热率石墨膜的GaN半桥功率器封装散热研究  

Research on heat dissipation of GaN half-bridge power device package based on high thermal conductivity graphite film

作　　者：寇玉霞 张旭[1] 袁芳[1] 郭玉洁 常育宽 陈弘达[1] KOU Yuxia;ZHANG Xu;YUAN Fang;GUO Yujie;CHANG Yukuan;CHEN Hongda(Optoelectronics Research and Development Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所光电子研究发展中心,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《光电子．激光》2022年第12期1248-1254,共7页Journal of Optoelectronics·Laser

摘　　要：本文针对激光雷达转镜扫描电机对调速精度、频率和运动幅度的需求,提出了一种基于高热导率石墨膜的GaN半桥功率器封装方案。仿真结果表明,与环氧玻璃布层压板(FR-4)基板、FR-4基板+铜散热片、陶瓷基板三种散热结构相比,采用FR-4基板+导热石墨膜散热结构的GaN半桥功率器,制备成本较低、工艺复杂度可控、成品质量轻、散热性能好,最高可降温32.6℃,散热性能可提升29.6%。导热底部填充胶起到热耦合作用,在石墨膜封装结构中不可或缺。换热系数可影响散热性能,在其他散热影响因素无法再优化情况下,可通过增加换热系数提高散热效果。本文研究结果对高频、高功率密度、小尺寸功率器件封装热设计具有一定的参考和指导意义。In this paper, a GaN half-bridge power device packaging scheme based on high thermal conductivity graphite film is proposed to meet the requirements of the speed regulation accuracy, frequency and motion amplitude of the lidar rotating mirror scanning motor.The simulation results show that, compared with the three heat dissipation structures of FR-4 substrate, FR-4 substrate with copper heat sink, and ceramic substrate, the GaN half-bridge power device using the FR-4 substrate with thermally conductive graphite film heat dissipation structure has the characteristics of low preparation cost, controllable process complexity, light weight of finished product and good heat dissipation performance whose maximum temperature reduction is 32.6 ℃,and heat dissipation performance can be improved by 29.6%.Thermally conductive underfill acts as thermal coupling and is indispensable in graphite film packaging structures.The heat transfer coefficient can affect the heat dissipation performance.When other heat dissipation influencing factors cannot be optimized, the heat dissipation effect can be improved by increasing the heat transfer coefficient.The research results in this paper have certain reference and guiding significance for the thermal design of high frequency, high power density and small size power device packaging.

关 键 词：激光雷达 GaN半桥功率器 导热石墨膜 底部填充胶 散热性能 

分 类 号：TN492[电子电信—微电子学与固体电子学]