Phase-controlled van der Waals growth of wafer-scale 2D MoTe_(2) layers for integrated high-sensitivity broadband infrared photodetection  

作　　者：Di Wu Chenguang Guo Longhui Zeng Xiaoyan Ren Zhifeng Shi Long Wen Qin Chen Meng Zhang Xin Jian Li Chong-Xin Shan Jiansheng Jie 

机构地区：[1]School of Physics and Microelectronics,Key Laboratory of Material Physics Ministry of Education,Zhengzhou University,Zhengzhou,Henan 450052,China [2]Department of Electrical and Computer Engineering,University of California San Diego,La Jolla,CA 92093,USA [3]Institute of Nanophotonics,Jinan University,Guangzhou,Guangdong 511443,China [4]Institute of Functional Nano and Soft Materials(FUNSOM),Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices,Soochow University,Suzhou,Jiangsu 215123,China

出　　处：《Light(Science & Applications)》2023年第1期77-88,共12页光（科学与应用)（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.U2004165,U22A20138,52225303,91833303,and 12174349);Natural Science Foundation of Henan Province,China(No.202300410376);Henan provincial key science and technology research projects(No.212102210130).

摘　　要：Being capable of sensing broadband infrared(IR)light is vitally important for wide-ranging applications from fundamental science to industrial purposes.Two-dimensional(2D)topological semimetals are being extensively explored for broadband IR detection due to their gapless electronic structure and the linear energy dispersion relation.However,the low charge separation efficiency,high noise level,and on-chip integration difficulty of these semimetals significantly hinder their further technological applications.Here,we demonstrate a facile thermal-assisted tellurization route for the van der Waals(vdW)growth of wafer-scale phase-controlled 2D MoTe_(2)layers.Importantly,the type-ⅡWeyl semimetal 1T'-MoTe_(2)features a unique orthorhombic lattice structure with a broken inversion symmetry,which ensures efficient carrier transportation and thus reduces the carrier recombination.This characteristic is a key merit for the well-designed 1T'-MoTe_(2)/Si vertical Schottky junction photodetector to achieve excellent performance with an ultrabroadband detection range of up to 10.6μm and a large room temperature specific detectivity of over 108 Jones in the mid-infrared(MIR)range.Moreover,the large-area synthesis of 2D MoTe_(2)layers enables the demonstration of high-resolution uncooled MIR imaging capability by using an integrated device array.This work provides a new approach to assembling uncooled IR photodetectors based on 2D materials.

关 键 词：hinder enable DIFFICULTY 

分 类 号：R73[医药卫生—肿瘤]