射频磁控溅射制备二氧化锡薄膜的气敏特性  

Gas sensitive properties of tin oxide thin film prepared by RF magnetron sputtering

作　　者：刘文强 吴鹏举 王瑗瑗 陈庭煜 马鸿雁[2] 王国东 LIU Wenqiang;WU Pengju;WANG Yuanyuan;CHEN Tingyu;MA Hongyan;WANG Guodong(School of Physics and Electronic Information Engineering,Henan Polytechnic University,Jiaozuo 454000,China;School of Safety Science and Engineering,Henan Polytechnic University,Jiaozuo 454000,China)

机构地区：[1]河南理工大学物理与电子信息学院,河南焦作454000 [2]河南理工大学安全科学与工程学院,河南焦作454000

出　　处：《传感器与微系统》2023年第3期53-56,共4页Transducer and Microsystem Technologies

基　　金：河南省高校科技创新团队支持计划资助项目(21IRTSTHN016);河南省高校基本科研业务费专项资金资助项目(NSFRF210324)。

摘　　要：采用射频(RF)磁控溅射法在P型硅衬底上制备了具有良好电学特性和气敏特性的二氧化锡(SnO_(2))纳米薄膜。在溅射气压分别为0.1,1.0,2.5 Pa的条件下,制备了不同表面形貌的SnO_(2)薄膜,详细分析了溅射气压对SnO_(2)薄膜表面生长、PN结的伏安特性和气敏特性的影响。实验结果表明:在溅射气压为2.5 Pa时,PN结结晶质量最好;在室温条件下,溅射气压为2.5 Pa时,SnO_(2)纳米薄膜在16×10^(-3)的乙醇环境中的电流灵敏度可达246%。SnO_(2)nano thin films with good electrical and gas sensitive properties are prepared on P type silicon substrates by radio frequency(RF)magnetron sputtering method.Under the condition of sputtering pressure of 0.1,1.0,2.5 Pa, SnO_(2)thin film with different surface topography are prepared.The effects of sputtering pressure on the surface growth of SnO_(2)thin films, the volt-ampere characteristics and gas sensitivity of PN junction are analyzed in detail.The experimental results show that the crystallization quality of PN junction is the best when the sputtering pressure is 2.5 Pa.At room temperature and sputtering pressure of 2.5 Pa, the current sensitivity of SnO_(2) nanofilms can reach 246 % in the environment of 16×10^(-3)ethanol.

关 键 词：射频磁控溅射 二氧化锡薄膜 PN结 电学性能 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TN305[自动化与计算机技术—控制科学与工程]