用于掺铒光纤放大器的高功率单模980nm半导体激光芯片与模块  

High-Power Single-Mode 980 nm Semiconductor Laser Chip and Module for Erbium-Doped Fiber Amplifiers

作　　者：唐松 张通 赵勇明 陈王义博 张艳春 杨国文 Tang Song;Zhang Tong;Zhao Yongming;Chen Wangyibo;Zhang Yanchun;Yang Guowen(Dogain Laser Technology(Suzhou)Co.Ltd.,Suzhou 215000,Jiangsu,China)

机构地区：[1]度亘激光技术(苏州)有限公司,江苏苏州215000

出　　处：《中国激光》2023年第2期142-145,共4页Chinese Journal of Lasers

摘　　要：报道了应用于掺铒光纤放大器(EDFA)的高功率单模980nm半导体激光芯片和泵浦模块。所研制的单基横模980nm激光芯片的kink-free输出功率可达1650mW,最高热反转功率可达2.4W。利用此芯片研制了14pin蝶形封装模块,采用光纤光栅进行波长锁定,实现了单模输出功率超过1300mW以及从阈值到1300mW的大动态范围的波长锁定,边模抑制比(SMSR)大于30dB,峰值波长为974.5nm±0.5nm,光谱半峰全宽(FWHM)小于0.5nm,带内功率占比(PIB)大于95%。Objective For erbium-doped fiber amplifier(EDFA) pumping sources,980 nm single-mode semiconductor lasers and modules are widely used.These modules,which are driven by dense wavelength division multiplexing(DWDM) in optical communication systems and yield more than 1 W of output power,are in high demand.However,achieving more than 1 W of output power is challenging owing to the restrictions caused by thermal rollover,catastrophic optical damage(COD),kinks in the light-current curve,reliable operation range,and wide-ranging stable wavelength locking requirements.This paper presents the development of highpower single-transverse-mode 980 nm semiconductor laser and modules.By adopting advanced chip designs,sophisticated device fabrication procedures,specific facet coating processes,and advanced module packaging,output power levels of 1650 and 1300 mW are achieved for the chip and module,respectively.Methods To fabricate the single-mode 980 nm semiconductor laser,an asymmetric epitaxial design was applied,and a material was grown via metal-organic chemical vapor deposition(MOCVD).Ridge waveguides were formed during device fabrication.A wafer was cleaved into bars with high-and low-reflection coatings on its two facets.Singulated chips were mounted p-side up on AlN submounts bonded by an AuSn alloy.A fiber Bragg grating and an optimized fiber lens were integrated to manufacture a standard14 pin butterfly module with superior performance.Results and Discussions The developed single-mode 980 nm semiconductor laser yields a high kink-free output power of1650 mW with a maximum rollover power of 2.4 W.No failure is observed during the test involving a maximum driving current of4 A.An accelerated long-life test is performed using 21 units of 5 mm long semiconductor lasers under an injection current of 2 A and a junction temperature of 137℃.The life test is conducted for more than 2000 h without failure.For the 14 pin butterfly module,wavelength locking over a wide range is accomplished under various power levels and temper

关 键 词：激光器 单模 光纤光栅 泵浦 

分 类 号：O475[理学—半导体物理]