混合漏极型GaN晶体管动态电阻特性研究  

Study on Comprehensive Evaluation of Dynamic Resistance of GaN with Hybrid-drain

作　　者：白宇[1] BAI Yu(Zhejiang University,Zhejiang 310013,China)

机构地区：[1]浙江大学,浙江310013

出　　处：《电子技术（上海）》2023年第1期1-3,共3页Electronic Technology

基　　金：国家自然科学基金资助项目(52077200);浙江省杰出青年科学基金(LR21E070001);2020年广东省重点领域研发计划重大专项(2020B010174003)。

摘　　要：阐述动态电阻退化是GaN晶体管面临的主要问题之一,混合漏极型GaN晶体管的动态导通电阻特性与没有p-GaN漏极的GaN晶体管不同,需要得到进一步的研究。探讨使用多脉冲测试来表征HD-GIT在不同温度、电压应力和开关模式的条件下的动态导通电阻,对内在机制进行分析。This paper describes that dynamic on-resistance degradation is one of the primary issues for GaN transistors. The dynamic on-resistance characteristics of Hybrid drain-embedded gate injection transistor(HD-GIT) are distinct from its counterpart without a p-GaN drain, which merits systematic further investigations. In this work, multi-pulse tests have been carried out to characterize the dynamic on-resistance of HD-GIT under condition with varying temperatures, voltage stress, and switching modes,whereby the physical mechanisms have been identified.

关 键 词：功率器件 氮化镓 动态电阻 硬开关 

分 类 号：TN304.2[电子电信—物理电子学] TN386