离子轰击对致密T区结构Cr薄膜残余应力的影响  

Intrinsic Residual Stress Induced by the Ion Bombardment in Dense T-Zone Cr Thin Films

作　　者：李玉阁[1] 赵宜妮 屈亚哲 冷云杉 雷明凯[1] Li Yuge;Zhao Yini;Qu Yazhe;Leng Yunshan;Lei Mingkai(School of Materials Science and Engineering,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]大连理工大学材料科学与工程学院表面工程实验室,辽宁大连116024

出　　处：《稀有金属材料与工程》2023年第2期737-744,共8页Rare Metal Materials and Engineering

基　　金：国家重点基础研究发展计划(2018YFA0704603);国家自然科学基金(51601029,U21B2078);中央高校基本科研业务费专项资金(DUT19JC52)。

摘　　要：对于能量沉积技术,离子轰击是独立于晶粒尺寸之外影响残余应力的重要因素,沉积束流能量和通量是决定残余应力演化的关键参数。本研究分别采用高功率调制脉冲磁控溅射(modulated pulsed power magnetron sputtering,MPPMS)和高功率深振荡磁控溅射(deep oscillation magnetron sputtering, DOMS)控制沉积Cr薄膜的束流能量和通量,在相近的平均功率下调节微脉冲参数对峰值电流和峰值电压进行控制,进而实现离子轰击对本征残余应力控制。MPPMS和DOMS沉积的Cr薄膜厚度分别控制在0.1、0.2、0.5、1.0、1.5和3.0μm,并对残余应力进行对比研究。所有沉积的Cr薄膜均呈现Cr(110)择优取向,且形成了晶粒尺寸相当的致密T区结构。较之MPPMS,DOMS沉积Cr薄膜更呈现残余压应力特征。当Cr薄膜厚度小于0.5μm时,DOMS沉积Cr薄膜的残余应力表现出较高的压应力;进一步增加膜厚,残余应力逐渐受残余拉应力控制。在薄膜生长过程中,离子轰击在薄膜生长初期对残余应力贡献不大,当薄膜生长较厚时,离子能量对薄膜残余应力影响明显。离子能量是影响残余压应力形成的重要因素,高能量离子轰击有利于残余压应力的形成和控制。For energetic deposition, ion bombardment is an important factor independent of grain size for influencing the residual stress,and the energy and flux are critical parameters to determine the residual stress evolution. In this work, modulated pulsed power magnetron sputtering(MPPMS) and deep oscillation magnetron sputtering(DOMS) were employed to control the energy and flux to modulate the ion bombardment for intrinsic stress generation under similar average power. The films thickness was selected at 0.1, 0.2, 0.5, 1.0, 1.5 and 3.0μm to give a comparative study of the intrinsic part of residual stress. All Cr coatings were textured along Cr(110) preferred orientation with dense T-zone columnar microstructure of equivalent grain size. Compared with MPPMS, Cr thin films deposited by DOMS show a compressive residual stress tendency. When the thickness of Cr thin films is under 0.5 μm, Cr thin films deposited by DOMS show higher compressive residual stress. Further increasing the film thickness, the compressive residual stress first shows a sudden decrease in a sharp slope, and then turns to relative slow decrease and gradually turns to show tensile stress. In the film continuous growing process, the ion bombardment shows limited effect in the early growth stage, but energy of the bombardment ions shows obvious effect on residual stress when the thin film grows thicker. Ion energy is an important factor influencing the formation of compressive residual stress, and ion bombardment with high energy assists the generation and control of compressive residual stress.

关 键 词：高功率调制脉冲磁控溅射 高功率深振荡磁控溅射 Cr薄膜 残余应力 离子轰击 

分 类 号：TG174.444[金属学及工艺—金属表面处理]