Abnormal magnetoresistance effect in the Nb/Si superconductor–semiconductor heterojunction  

作　　者：胡志伟 邱祥冈 Zhi-Wei Hu;Xiang-Gang Qiu(Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China;Collaborative Innovation Center of Quantum Matter,Beijing 100084,China)

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China [3]Collaborative Innovation Center of Quantum Matter,Beijing 100084,China

出　　处：《Chinese Physics B》2023年第3期484-490,共7页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China and the Ministry of Science and Technology of China.

摘　　要：Ultrathin superconducting Nb films of about 8 nm thick have been deposited on heavily doped Si substrates through DC magnetron sputtering and then the high-quality Nb/Si superconductor–semiconductor heterojunctions have been fabricated by electron beam lithography and reactive ion etching.An abnormal magnetoresistance effect,which manifests itself as a zero field resistance peak under a magnetic field applied perpendicular to the interface,has been distinctly observed when the Nb film is in the superconductiing state.By considering the heterojunction interface being equivalent to the structure of superconductor–barrier layer–superconductor configuration,we could generally understand this unusual effect based on the Andreev reflection mechanism.Our results can be of help for the future development on compatibility and scalability of the silicon-based nanoscale superconducting devices for integrated circuits and superconducting quantum electronics.

关 键 词：SUPERCONDUCTOR MAGNETORESISTANCE HETEROJUNCTION 

分 类 号：O471.1[理学—半导体物理]