先进节点图案化晶圆缺陷检测技术  

Patterned Wafer Defect Inspection at Advanced Technology Nodes

作　　者：刘佳敏[1] 赵杭 吴启哲 冯献瑞 赵翔宇 张震阳 张楚苗 黄弢[2] 朱金龙 刘世元[1,3] Liu Jiamin;Zhao Hang;Wu Qizhe;Feng Xianrui;Zhao Xiangyu;Zhang Zhenyang;Zhang Chumiao;Huang Tao;Zhu Jinlong;Liu Shiyuan(State Key Laboratory of Digital Manufacturing Equipment and Technology,Huazhong University of Science and Technology,Wuhan 430074,Hubei,China;School of Mechanical Science&Engineering,Huazhong University of Science and Technology,Wuhan 430074,Hubei,China;Optics Valley Laboratory,Wuhan 430074,Hubei,China)

机构地区：[1]华中科技大学数字制造装备与技术国家重点实验室,湖北武汉430074 [2]华中科技大学机械科学与工程学院,湖北武汉430074 [3]光谷实验室,湖北武汉430074

出　　处：《激光与光电子学进展》2023年第3期13-41,共29页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(52175509,52130504);湖北省重点研发计划(2020BAA008)。

摘　　要：随着亚10 nm集成电路芯片逐步进入消费电子、互联硬件、电子医疗设备等领域,由半导体制造设备所引入的晶圆缺陷对集成电路在良率与价格方面的影响将不断显现,由此带来的对典型缺陷进行高速识别、定位与分类等制造过程控制环节,将变得越来越具有挑战性。传统的晶圆缺陷检测方法包括明场、暗场及电子束成像方法,尽管能够覆盖绝大多数缺陷检测场景,但难以在检测精度、检测灵敏度和检测速度上取得较好的平衡。纳米光子学、计算成像、定量相位成像、光学涡旋、多电子束扫描、热场成像以及深度学习等新兴技术的出现,在提升缺陷灵敏度、分辨率以及对比度等方面已初步展现出一定的潜力,这为晶圆缺陷检测提供了新的可能性。因此,本综述将从缺陷的可检测性、缺陷检测系统与原理样机、先进图像后处理算法三个方面总结晶圆缺陷检测领域的最新进展,以期对初入该领域的研究人员和跨学科工作者提供一定助益。With the everincreasing demand for sub10 nm integrated circuit chips in the fields such as consumer electronics,interconnect hardware,and electronic medical equipment,the impact of wafer defects introduced by semiconductor manufacturing equipment on the yield and price of integrated circuits will continue to emerge,which makes the manufacturing process control such as the highspeed identification,localization,and classification of typical defects more challenging.Although conventional wafer defect inspection methods such as brightfield,darkfield,and electronbeam imaging can cover most defect inspection scenarios,they cannot balance inspection accuracy,sensitivity,and speed.Emerging techniques such as nanophotonics,computational imaging,quantitative phase imaging,optical vortex,multibeam scanning electron microscopy,thermal field imaging,and deep learning have shown great potential in improving defect sensitivity,resolution,and contrast,which opens up new possibilities for wafer defect inspection.Hence,we make a comprehensive review for the progress in wafer defect inspection from three aspects:the assessment of defect detectability,the diverse inspection methods and prototypes,and the advanced postprocessing algorithms.It is expected to help both researchers and interdisciplinary workers who are new entrants in the field.

关 键 词：测量 晶圆检测 集成电路 光学检测 光学成像 电子束成像 热场成像 

分 类 号：O436[机械工程—光学工程]