CMOS image sensors in ISSCC 2023  

作　　者：Peng Feng Nanjian Wu Jian Liu Liyuan Liu 

机构地区：[1]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2023年第4期6-7,共2页半导体学报（英文版）

基　　金：the National Natural Science Foundation of China(62134004);the National Key Research and Development Program of China(2022YFB2804402);Basic Frontier Scientific Research Program of the Chinese Academy of Sciences(ZDBS-LY-JSC008)。

摘　　要：In IEEE International Solid-State Circuits Conference(ISSCC)2023,CMOS process is still the dominating fabrication technology for image sensors,and three-dimensional(3D)wafer-stacked process with Cu–Cu pixel-level connection has been adopted to achieve small pixel size and high integration level.The development of CMOS image sensors(CIS)is still focusing on the trends of high performance and more functionalities,such as hybrid event-based vision sensor(EVS)and terahertz(THz)/X-ray image sensor.

关 键 词：ISSCC IMAGE PROCESS 

分 类 号：TP391.41[自动化与计算机技术—计算机应用技术] TP212[自动化与计算机技术—计算机科学与技术]